Goser, K. F.
42  Ergebnisse:
Personensuche X
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1

Circuit and application aspects of tunnelling devices in a ..:

Glösekötter, P. ; Pacha, C. ; Goser, K. F....
International Journal of Circuit Theory and Applications.  31 (2003)  1 - p. 83-103 , 2003
 
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2

Monolithic integration of a silicon micromotor in combinati..:

Horstmann, J.T. ; Goser, K.F.
Microelectronic Engineering.  67-68 (2003)  - p. 390-396 , 2003
 
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3

Midbandgap materials for sub-100-nm MOS transistors:

Vieregge, T. ; Horstmann, J.T. ; Goser, K.F.
Microelectronic Engineering.  61-62 (2002)  - p. 637-641 , 2002
 
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4

New fabrication technique for nano-MOS transistors with W=2..:

Horstmann, J.T. ; Goser, K.F.
Microelectronic Engineering.  61-62 (2002)  - p. 601-605 , 2002
 
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5

Manufacturability and robust design of nanoelectronic logic..:

Prost, W. ; Auer, U. ; Tegude, F.-J....
International Journal of Circuit Theory and Applications.  28 (2000)  6 - p. 537-552 , 2000
 
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6

Threshold logic circuit design of parallel adders using res..:

Pacha, C. ; Auer, U. ; Burwick, C....
IEEE Transactions on Very Large Scale Integration (VLSI) Systems.  8 (2000)  5 - p. 558-572 , 2000
 
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7

Digital Circuit Design Based on the Resonant-Tunneling-Hete..:

, In: Proceedings of the 13th symposium on Integrated circuits and systems design,
Glosekotter, P. ; Pacha, C. ; Goser, K. F.... - p. 150 ff. , 2000
 
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9

Investigation of surface-induced latch-up in VLSI CMOS usin..:

Quincke, J. ; Dielacher, F. ; Goser, K.
Microelectronic Engineering.  7 (1987)  2-4 - p. 371-375 , 1987
 
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11

Nanoelectronics and nanosystems 

from transistors to molecular and quantum devices 
Exemplar:  Zentrale: a elt 699.3 e/916
 
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12

Schaltungselemente mit Nanometer-Geometrien in allen Raumri.. 

Zwischenbericht zum DFG-Projekt ; Förderzeitraum: 15. Mär... 
 
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13

Entwicklung eines Tiefenätzprozesses zur Strukturierung vo.. 

Abschlußbericht des Teilvorhabens im BMBF-Verbundvorhaben "... 
Otterbach, R. ; Hilleringmann, U. ; Goser, K. - [Elektronische Ressource] . , 2002
 
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