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Goswami, Rupam
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1

Review–Silicon Based ISFETs: Architecture, Fabrication Proc..:

Gupta, Anita ; Sharma, Santanu ; Goswami, Rupam
ECS Journal of Solid State Science and Technology.  13 (2024)  4 - p. 047006 , 2024
Link: https://doi.org/10.1149/..
 
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2

Study on trap sensitivity for single material gate and doub..:

Rai, Shashank ; Sharma, Ritu ; Saha, Rajesh..
Physica Scripta.  99 (2024)  7 - p. 075409 , 2024
Link: https://doi.org/10.1088/..
 
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3

Fin core dimensionality and corner effect in dual core gate..:

Das, Prachuryya Subash ; Deb, Deepjyoti ; Goswami, Rupam..
Microelectronics Journal.  143 (2024)  - p. 105985 , 2024
Link: https://doi.org/10.1016/..
 
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4

Design and Development of a Charcoal-Based Sensor for Enhan..:

, In: Lecture Notes in Networks and Systems; Machine Intelligence for Research and Innovations,
Goswami, Rupam ; Kumar, Vikas ; Parida, Manoj Kumar - p. 73-83 , 2024
Link: https://doi.org/10.1007/..
 
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5

Mobility effects due to doping, temperature and interface t..:

Das, Prachuryya Subash ; Nath, Dwipayan ; Deb, Deepjyoti...
Microsystem Technologies.  , 2024
Link: https://doi.org/10.1007/..
 
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6

Streamflow forecast model using ANN:

Sonowal, Durlav ; Saharia, Trinayan ; Baruah, Ratul Kumar.
Journal of Applied Water Engineering and Research.  , 2024
Link: https://doi.org/10.1080/..
 
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7

Incomplete Ionization-Dependent Carrier Mobility in Silicon..:

Pathak, Priyam ; Deb, Deepjyoti ; Nath, Dwipayan...
Journal of Electronic Materials.  53 (2024)  3 - p. 1142-1160 , 2024
Link: https://doi.org/10.1007/..
 
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8

Investigation on Effect of Interface Trap Charges and Tempe..:

Saha, Rajesh ; Goswami, Rupam ; Hoque, Shanidul
ECS Journal of Solid State Science and Technology.  12 (2023)  8 - p. 083004 , 2023
Link: https://doi.org/10.1149/..
 
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9

Impact of Doping and Temperature on Mobility in Single and ..:

, In: 2023 IEEE Devices for Integrated Circuit (DevIC),
Nath, Dwipayan ; Deb, Deepjyoti ; Das, Prachuryya Subash... - p. 392-395 , 2023
Link: https://doi.org/10.1109/..
 
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10

Impact of Interface Trap Distribution on the Performance of..:

Jaiswal, Saurabh ; Goswami, Rupam ; Goswami, Manish.
Silicon.  15 (2023)  14 - p. 6269-6281 , 2023
Link: https://doi.org/10.1007/..
 
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11

Flatband voltage in MOS structures for spatial fixed oxide ..:

Hazarika, Prajwalita ; Ray, Mrigashree ; Hazarika, Aditya...
Journal of Materials Science: Materials in Electronics.  34 (2023)  15 - p. , 2023
Link: https://doi.org/10.1007/..
 
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12

Simulation study of n+ pocket step shape heterodielectric d..:

Saha, Rajesh ; Goswami, Rupam ; Bhowmick, Brinda.
Materials Science and Engineering: B.  293 (2023)  - p. 116491 , 2023
Link: https://doi.org/10.1016/..
 
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13

Dependence of RF/analog and linearity parameters on ferroel..:

Saha, Rajesh ; Panda, Deepak Kumar ; Goswami, Rupam
Ferroelectrics.  602 (2023)  1 - p. 204-214 , 2023
Link: https://doi.org/10.1080/..
 
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14

Impact on performance of dual stack hetero- gated dielectri..:

Mangla, Ayush ; Saha, Rajesh ; Goswami, Rupam
Microelectronics Journal.  129 (2022)  - p. 105603 , 2022
Link: https://doi.org/10.1016/..
 
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15

Introduction:

, In: Lecture Notes in Electrical Engineering; Contemporary Trends in Semiconductor Devices,
Goswami, Rupam ; Saha, Rajesh - p. 1-8 , 2022
Link: https://doi.org/10.1007/..
 
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