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X
Govorkov, A. V.
264  Ergebnisse:
Personensuche X
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1

Hydride vapor phase GaN films with reduced density of resid..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Journal of Applied Physics.  115 (2014)  18 - p. , 2014
Link: https://doi.org/10.1063/..
 
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2

Deep hole traps in undoped n-GaN films grown by hydride vap..:

Lee, In-Hwan ; Polyakov, A. Y. ; Smirnov, N. B....
Journal of Applied Physics.  115 (2014)  22 - p. , 2014
Link: https://doi.org/10.1063/..
 
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3

Recombination and trapping centers in pure and doped TlBr c..:

Gazizov, I. M. ; Zaletin, V. M. ; Govorkov, A. V....
Semiconductors.  48 (2014)  9 - p. 1123-1133 , 2014
Link: https://doi.org/10.1134/..
 
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4

Electrical, optical, and structural properties of GaN films..:

Polyakov, A.Y. ; Smirnov, N.B. ; Yakimov, E.B....
Journal of Alloys and Compounds.  617 (2014)  - p. 200-206 , 2014
Link: https://doi.org/10.1016/..
 
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5

Electrical and structural properties of GaN films and GaN/I..:

Jang, Lee-Woon ; Jeon, Dae-Woo ; Polyakov, A.Y....
Journal of Alloys and Compounds.  589 (2014)  - p. 507-512 , 2014
Link: https://doi.org/10.1016/..
 
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6

Properties of nanopillar structures prepared by dry etching..:

Polyakov, A.Y. ; Jeon, Dae-Woo ; Govorkov, A.V....
Journal of Alloys and Compounds.  554 (2013)  - p. 258-263 , 2013
Link: https://doi.org/10.1016/..
 
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7

Effects of annealing in oxygen on electrical properties of ..:

Polyakov, A.Y. ; Smirnov, N.B. ; Ha, Min-Woo...
Journal of Alloys and Compounds.  575 (2013)  - p. 17-23 , 2013
Link: https://doi.org/10.1016/..
 
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8

Electrical properties of undoped GaN films grown by maskles..:

Polyakov, A. Y. ; Jeon, Dae-Woo ; Lee, In-Hwan...
Journal of Applied Physics.  113 (2013)  8 - p. , 2013
Link: https://doi.org/10.1063/..
 
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9

Deep traps and enhanced photoluminescence efficiency in non..:

Polyakov, A. Y. ; Jang, Lee-Woon ; Jo, Dong-Seob...
Journal of Applied Physics.  111 (2012)  3 - p. , 2012
Link: https://doi.org/10.1063/..
 
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10

Electrical and luminescent properties and deep traps spectr..:

Polyakov, A. Y. ; Jeon, Dae-Woo ; Smirnov, N. B....
Journal of Applied Physics.  112 (2012)  7 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Electronic properties and deep traps in electron-irradiated..:

Brudnyi, V. N. ; Verevkin, S. S. ; Govorkov, A. V....
Semiconductors.  46 (2012)  4 - p. 433-439 , 2012
Link: https://doi.org/10.1134/..
 
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12

Admittance Spectra Studies of Quantum Well States in AlGaN/..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
ECS Journal of Solid State Science and Technology.  1 (2012)  3 - p. P152-P156 , 2012
Link: https://doi.org/10.1149/..
 
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13

Role of nonradiative recombination centers and extended def..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Applied Physics Letters.  98 (2011)  7 - p. , 2011
Link: https://doi.org/10.1063/..
 
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14

Comparison of hole traps in n-GaN grown by hydride vapor ph..:

Polyakov, A. Y. ; Lee, I.-H. ; Smirnov, N. B....
Journal of Applied Physics.  109 (2011)  12 - p. , 2011
Link: https://doi.org/10.1063/..
 
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15

10 MeV electrons irradiation effects in variously doped n-G..:

Polyakov, A. Y. ; Lee, In-Hwan ; Smirnov, N. B....
Journal of Applied Physics.  109 (2011)  12 - p. , 2011
Link: https://doi.org/10.1063/..
 
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