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Grampeix, H.
63  Ergebnisse:
Personensuche X
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1

Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n..:

Fernandes Paes Pinto Rocha, P. ; Vauche, L. ; Bedjaoui, M....
Solid-State Electronics.  209 (2023)  - p. 108780 , 2023
Link: https://doi.org/10.1016/..
 
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2

High-Performance Operation and Solder Reflow Compatibility ..:

Francois, T. ; Coignus, J. ; Makosiej, A....
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2108-2114 , 2022
Link: https://doi.org/10.1109/..
 
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3

16kbit HfO2:Si-based 1T-1C FeRAM Arrays Demonstrating High ..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Francois, T. ; Coignus, J. ; Makosiej, A.... - p. 33.1.1-33.1.4 , 2021
Link: https://doi.org/10.1109/..
 
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4

On the mechanisms of cation injection in conducting bridge ..:

Saadi, M. ; Gonon, P. ; Vallée, C....
Journal of Applied Physics.  119 (2016)  11 - p. , 2016
Link: https://doi.org/10.1063/..
 
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5

Resistive switching of HfO2-based Metal–Insulator–Metal dio..:

Bertaud, T. ; Walczyk, D. ; Walczyk, Ch....
Thin Solid Films.  520 (2012)  14 - p. 4551-4555 , 2012
Link: https://doi.org/10.1016/..
 
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6

Stress-induced leakage current and trap generation in HfO2 ..:

Mannequin, C. ; Gonon, P. ; Vallée, C....
Journal of Applied Physics.  112 (2012)  7 - p. 074103 , 2012
Link: https://doi.org/10.1063/..
 
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7

Impact of vacuum anneal at low temperature on Al2O3/In-base..:

Martinez, E. ; Grampeix, H. ; Desplats, O....
Chemical Physics Letters.  539-540 (2012)  - p. 139-143 , 2012
Link: https://doi.org/10.1016/..
 
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8

Investigation of HfO2 and ZrO2 for Resistive Random Access ..:

Salaün, A. ; Grampeix, H. ; Buckley, J....
Thin Solid Films.  525 (2012)  - p. 20-27 , 2012
Link: https://doi.org/10.1016/..
 
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9

Voltage-induced recovery of dielectric breakdown (high curr..:

El Kamel, F. ; Gonon, P. ; Vallée, C...
Applied Physics Letters.  98 (2011)  2 - p. , 2011
Link: https://doi.org/10.1063/..
 
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10

3D monolithic integration: Technological challenges and ele..:

Vinet, M. ; Batude, P. ; Tabone, C....
Microelectronic Engineering.  88 (2011)  4 - p. 331-335 , 2011
Link: https://doi.org/10.1016/..
 
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11

SiON and SiO2/HfSiON gate oxides time dependent dielectric ..:

Delcroix, P. ; Blonkowski, S. ; Kogelschatz, M....
Microelectronic Engineering.  88 (2011)  7 - p. 1376-1379 , 2011
Link: https://doi.org/10.1016/..
 
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12

High mobility CMOS: First demonstration of planar GeOI p-FE..:

Le Royer, C. ; Damlencourt, J.-F. ; Vincent, B....
Solid-State Electronics.  59 (2011)  1 - p. 2-7 , 2011
Link: https://doi.org/10.1016/..
 
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13

Dielectric relaxation in hafnium oxide: A study of transien..:

Mannequin, C. ; Gonon, P. ; Vallée, C....
Journal of Applied Physics.  110 (2011)  10 - p. , 2011
Link: https://doi.org/10.1063/..
 
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14

Comparative study of non-polar switching behaviors of NiO- ..:

Jousseaume, V. ; Fantini, A. ; Nodin, J.F....
Solid-State Electronics.  58 (2011)  1 - p. 62-67 , 2011
Link: https://doi.org/10.1016/..
 
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15

Innovative scheme for selective carbon nanotubes integratio..:

Fayolle, M. ; Pontcharra, J. ; Dijon, J....
Microelectronic Engineering.  88 (2011)  5 - p. 833-836 , 2011
Link: https://doi.org/10.1016/..
 
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