E-LIB Suche - Ergebnisse für: Green, Ronald

1

Effect of Dynamic Threshold-Voltage Instability on Dynamic ..:

Lelis, Aivars J. ; Urciuoli, Damian P. ; Schroen, Erik S...
IEEE Transactions on Electron Devices. 69 (2022) 10 - p. 5649-5655 , 2022

Link: https://doi.org/10.1109/..

2

Effects of Pulsed and DC Body-Diode Current Stress on the S..:

Green, Ronald ; Lelis, Aivars J. ; Nouketcha, Franklin L.
Materials Science Forum. 1004 (2020) - p. 1027-1032 , 2020

Link: https://doi.org/10.4028/..

3

Towards a Robust Approach to Threshold Voltage Characteriza..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald - p. 1-4 , 2020

Link: https://doi.org/10.1109/..

4

Comparison of SiC MOSFET Characteristics Following Body-Dio..:

Green, Ronald ; Lelis, Aivars J. ; Nouketcha, Franklin L.
Materials Science Forum. 963 (2019) - p. 583-587 , 2019

Link: https://doi.org/10.4028/..

5

Influence of High-Temperature Bias Stress on Room-Temperatu..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Materials Science Forum. 963 (2019) - p. 757-762 , 2019

Link: https://doi.org/10.4028/..

6

Liver enzyme elevation caused by a compression of infiltrat..:

Kurihara, Manabu ; Bahr, Robert J. ; Green, Ronald
International Journal of Veterinary Science and Medicine. 6 (2018) 1 - p. 127-129 , 2018

Link: https://doi.org/10.1016/..

7

SiC MOSFET threshold-stability issues:

Lelis, Aivars J. ; Green, Ronald ; Habersat, Daniel B.
Materials Science in Semiconductor Processing. 78 (2018) - p. 32-37 , 2018

Link: https://doi.org/10.1016/..

8

Influences of Bias Interruption and Reapplication on High-T..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Materials Science Forum. 924 (2018) - p. 743-747 , 2018

Link: https://doi.org/10.4028/..

9

Short-Circuit Robustness of SiC Trench MOSFETs:

Green, Ronald ; Urciuoli, Damian ; Lelis, Aivars J.
Materials Science Forum. 924 (2018) - p. 715-718 , 2018

Link: https://doi.org/10.4028/..

10

Measurement considerations for evaluating BTI effects in Si..:

Habersat, Daniel B. ; Lelis, Aivars J. ; Green, Ronald
Microelectronics Reliability. 81 (2018) - p. 121-126 , 2018

Link: https://doi.org/10.1016/..

11

Short-Circuit Robustness Testing of SiC MOSFETs:

Green, Ronald ; Urciuoli, Damian P. ; Lelis, Aivars J.
Materials Science Forum. 897 (2017) - p. 525-528 , 2017

Link: https://doi.org/10.4028/..

12

Feasibility of SiC Threshold Voltage Drift Characterization..:

Habersat, Daniel B. ; Green, Ronald ; Lelis, Aivars J.
Materials Science Forum. 897 (2017) - p. 509-512 , 2017

Link: https://doi.org/10.4028/..

13

Teaching Zen's Ten Oxherding Pictures through Leonard Cohen..:

Green, Ronald
ASIANetwork Exchange: A Journal for Asian Studies in the Liberal Arts. 24 (2017) 1 - p. 29-58 , 2017

Link: https://doi.org/10.16995..

14

Measurement Issues Affecting Threshold-Voltage Instability ..:

Green, Ronald ; Lelis, Aivars J. ; Habersat, Daniel B.
Materials Science Forum. 858 (2016) - p. 461-464 , 2016

Link: https://doi.org/10.4028/..

15

Threshold-Voltage Instability in SiC MOSFETs Due to Near-In..:

Lelis, Aivars J. ; Green, Ronald ; Habersat, Daniel B.
Materials Science Forum. 858 (2016) - p. 585-590 , 2016

Link: https://doi.org/10.4028/..