E-LIB Suche - Ergebnisse für: Gregušová, D

1

Conditioning nano-LEDs in arrays by laser-micro-annealing: ..:

Mikulics, M. ; Kordoš, P. ; Gregušová, D....
Applied Physics Letters. 118 (2021) 4 - p. , 2021

Link: https://doi.org/10.1063/..

2

Local increase in compressive strain (GaN) in gate recessed..:

Mikulics, M ; Kordoš, P ; Gregušová, D...
Semiconductor Science and Technology. 36 (2021) 9 - p. 095040 , 2021

Link: https://doi.org/10.1088/..

3

Investigation of interfaces and threshold voltage instabili..:

Pohorelec, O. ; Ťapajna, M. ; Gregušová, D....
Applied Surface Science. 528 (2020) - p. 146824 , 2020

Link: https://doi.org/10.1016/..

4

Impact of oxide/barrier charge on threshold voltage instabi..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 91 (2019) - p. 356-361 , 2019

Link: https://doi.org/10.1016/..

5

Corrigendum to "Impact of oxide/barrier charge on threshold..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 93 (2019) - p. 381 , 2019

Link: https://doi.org/10.1016/..

6

Characterization of interface states in AlGaN/GaN metal-oxi..:

Stoklas, R. ; Gregušová, D. ; Hasenöhrl, S....
Applied Surface Science. 461 (2018) - p. 255-259 , 2018

Link: https://doi.org/10.1016/..

7

Technology and application of in-situ AlOx layers on III-V ..:

Kúdela, R. ; Šoltýs, J. ; Kučera, M....
Applied Surface Science. 461 (2018) - p. 33-38 , 2018

Link: https://doi.org/10.1016/..

8

Properties of InGaAs/GaAs metal-oxide-semiconductor heteros..:

Gregušová, D. ; Gucmann, F. ; Kúdela, R....
Applied Surface Science. 395 (2017) - p. 140-144 , 2017

Link: https://doi.org/10.1016/..

9

Annealing, temperature, and bias-induced threshold voltage ..:

Blaho, M. ; Gregušová, D. ; Haščík, Š....
Applied Physics Letters. 111 (2017) 3 - p. , 2017

Link: https://doi.org/10.1063/..

10

Current conduction mechanism and electrical break-down in I..:

Kuzmik, J. ; Fleury, C. ; Adikimenakis, A....
Applied Physics Letters. 110 (2017) 23 - p. , 2017

Link: https://doi.org/10.1063/..

11

High resolution physical analysis of ohmic contact formatio..:

Graff, A. ; Simon-Najasek, M. ; Altmann, F....
Microelectronics Reliability. 76-77 (2017) - p. 338-343 , 2017

Link: https://doi.org/10.1016/..

12

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-..:

Ťapajna, M. ; Stoklas, R. ; Gregušová, D....
Applied Surface Science. 426 (2017) - p. 656-661 , 2017

Link: https://doi.org/10.1016/..

13

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxi..:

Stoklas, R ; Gregušová, D ; Blaho, M...
Semiconductor Science and Technology. 32 (2017) 4 - p. 045018 , 2017

Link: https://doi.org/10.1088/..

14

Direct electro-optical pumping for hybrid CdSe nanocrystal/..:

Mikulics, M. ; Arango, Y. C. ; Winden, A....
Applied Physics Letters. 108 (2016) 6 - p. , 2016

Link: https://doi.org/10.1063/..

15

Effect of HCl pretreatment on the oxide/semiconductor inter..:

, In: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM),

Tapajna, M. ; Husekova, K. ; Pohorelec, O.... - p. 207-210 , 2016

Link: https://doi.org/10.1109/..