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X
Grekhov, I. V.
298  Ergebnisse:
Personensuche X
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1

Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability ..:

Ivanov, P. A. ; Potapov, A. S. ; Lebedeva, N. M..
Technical Physics.  65 (2020)  12 - p. 2041-2046 , 2020
Link: https://doi.org/10.1134/..
 
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2

Numerical and Experimental Study of an Optimized p-SOS Diod:

Lyublinsky, A. G. ; Belyakova, E. I. ; Grekhov, I. V.
Technical Physics.  64 (2019)  3 - p. 373-379 , 2019
Link: https://doi.org/10.1134/..
 
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3

Investigation of the Turn-off Process of an Integrated Thyr..:

Grekhov, I. V. ; Lyublinskiy, A. G. ; Mikhailov, E. M..
Instruments and Experimental Techniques.  62 (2019)  4 - p. 493-497 , 2019
Link: https://doi.org/10.1134/..
 
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4

Influence of Dopant Incomplete Ionization on the Capacitanc..:

Ivanov, P. A. ; Potapov, A. S. ; Grekhov, I. V.
Technical Physics.  63 (2018)  6 - p. 928-931 , 2018
Link: https://doi.org/10.1134/..
 
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5

Experimental Observation of Delayed Impact-Ionization Avala..:

Brylevskiy, V. I. ; Smirnova, I. A. ; Podolska, N. I....
Technical Physics Letters.  44 (2018)  2 - p. 160-163 , 2018
Link: https://doi.org/10.1134/..
 
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6

Generation of High-Voltage Pulses by Sharp-Recovery SiC Dri..:

Ivanov, P. A. ; Grekhov, I. V.
Technical Physics.  63 (2018)  1 - p. 86-89 , 2018
Link: https://doi.org/10.1134/..
 
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7

Protection against degradation of the edge contour in fast-..:

Aristov, Yu. V. ; Voronkov, V. B. ; Grekhov, I. V....
Instruments and Experimental Techniques.  60 (2017)  2 - p. 210-212 , 2017
Link: https://doi.org/10.1134/..
 
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8

Quantum-well charge and voltage distribution in a metal–ins..:

Vexler, M. I. ; Illarionov, Yu. Yu. ; Grekhov, I. V.
Semiconductors.  51 (2017)  4 - p. 444-448 , 2017
Link: https://doi.org/10.1134/..
 
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9

High-power subnanosecond silicon avalanche shaper:

Grekhov, I. V. ; Lyublinskiy, A. G. ; Yusupova, Sh. A.
Technical Physics.  62 (2017)  5 - p. 812-815 , 2017
Link: https://doi.org/10.1134/..
 
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10

Current–voltage characteristics of high-voltage 4H-SiC p +–..:

Ivanov, P. A. ; Potapov, A. S. ; Samsonova, T. P..
Semiconductors.  51 (2017)  3 - p. 374-378 , 2017
Link: https://doi.org/10.1134/..
 
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11

The Numerical Simulation of the Nanosecond Switching of a p..:

Podolska, N. I. ; Lyublinskiy, A. G. ; Grekhov, I. V.
Technical Physics.  62 (2017)  12 - p. 1787-1790 , 2017
Link: https://doi.org/10.1134/..
 
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12

Analysis of the process of turning off an integrated thyris..:

Grekhov, I. V. ; Lyublinskiy, A. G. ; Skidanov, A. A.
Technical Physics.  62 (2017)  1 - p. 183-186 , 2017
Link: https://doi.org/10.1134/..
 
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13

Analysis of integrated thyristor switching-off by a reverse..:

Grekhov, I. V. ; Lyublinsky, A. G. ; Mikhailov, E. M...
Technical Physics.  62 (2017)  11 - p. 1684-1688 , 2017
Link: https://doi.org/10.1134/..
 
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14

Investigation of high-voltage integral pulse thyristors in ..:

Grekhov, I. V. ; Zhmodikov, A. L. ; Korotkov, S. V...
Instruments and Experimental Techniques.  59 (2016)  3 - p. 351-355 , 2016
Link: https://doi.org/10.1134/..
 
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15

Features of carrier tunneling between the silicon valence b..:

Vexler, M. I. ; Grekhov, I. V.
Semiconductors.  50 (2016)  5 - p. 671-677 , 2016
Link: https://doi.org/10.1134/..
 
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