E-LIB Suche - Ergebnisse für: Gucmann, F

1

Electron transport properties in thin InN layers grown on I..:

Stoklas, R. ; Hasenöhrl, S. ; Dobročka, E...
Materials Science in Semiconductor Processing. 155 (2023) - p. 107250 , 2023

Link: https://doi.org/10.1016/..

2

Structural and electrical properties of $\text{Ga}_{2}\math..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Hrubisak, F. ; Husekova, K. ; Egyenes, F.... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

3

Transport properties of Si-doped $\boldsymbol{\beta}-\mathb..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Egyenes, F. ; Gucmann, F. ; Dobrocka, E.... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

4

Doping efficiency and electron transport in Al-doped ZnO fi..:

Mošková, A. ; Moško, M. ; Precner, M....
Journal of Applied Physics. 130 (2021) 3 - p. , 2021

Link: https://doi.org/10.1063/..

5

Growth of α- and β-Ga2O3 epitaxial layers on sapphire subst..:

Egyenes-Pörsök, F ; Gucmann, F ; Hušeková, K...
Semiconductor Science and Technology. 35 (2020) 11 - p. 115002 , 2020

Link: https://doi.org/10.1088/..

6

Investigation of interfaces and threshold voltage instabili..:

Pohorelec, O. ; Ťapajna, M. ; Gregušová, D....
Applied Surface Science. 528 (2020) - p. 146824 , 2020

Link: https://doi.org/10.1016/..

7

A systematic study of MOCVD reactor conditions and Ga memor..:

Chauhan, Prerna ; Hasenöhrl, S. ; Vančo, Ľ....
CrystEngComm. 22 (2020) 1 - p. 130-141 , 2020

Link: https://doi.org/10.1039/..

8

Semi-insulating GaN for vertical structures: role of substr..:

Šichman, P. ; Hasenöhrl, S. ; Stoklas, R....
Materials Science in Semiconductor Processing. 118 (2020) - p. 105203 , 2020

Link: https://doi.org/10.1016/..

9

Impact of oxide/barrier charge on threshold voltage instabi..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 91 (2019) - p. 356-361 , 2019

Link: https://doi.org/10.1016/..

10

Evidence of relationship between strain and In-incorporatio..:

Chauhan, P. ; Hasenöhrl, S. ; Dobročka, E....
Journal of Applied Physics. 125 (2019) 10 - p. , 2019

Link: https://doi.org/10.1063/..

11

Corrigendum to "Impact of oxide/barrier charge on threshold..:

Ťapajna, M. ; Drobný, J. ; Gucmann, F....
Materials Science in Semiconductor Processing. 93 (2019) - p. 381 , 2019

Link: https://doi.org/10.1016/..

12

Technology and application of in-situ AlOx layers on III-V ..:

Kúdela, R. ; Šoltýs, J. ; Kučera, M....
Applied Surface Science. 461 (2018) - p. 33-38 , 2018

Link: https://doi.org/10.1016/..

13

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-..:

Ťapajna, M. ; Stoklas, R. ; Gregušová, D....
Applied Surface Science. 426 (2017) - p. 656-661 , 2017

Link: https://doi.org/10.1016/..

14

Properties of InGaAs/GaAs metal-oxide-semiconductor heteros..:

Gregušová, D. ; Gucmann, F. ; Kúdela, R....
Applied Surface Science. 395 (2017) - p. 140-144 , 2017

Link: https://doi.org/10.1016/..

15

Effect of HCl pretreatment on the oxide/semiconductor inter..:

, In: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM),

Tapajna, M. ; Husekova, K. ; Pohorelec, O.... - p. 207-210 , 2016

Link: https://doi.org/10.1109/..