Gucmann, Filip
33  Ergebnisse:
Personensuche X
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2

Growth of N-polar In-rich InAlN by metal organic chemical v..:

Hasenöhrl, Stanislav ; Blaho, Michal ; Dobročka, Edmund...
Materials Science in Semiconductor Processing.  156 (2023)  - p. 107290 , 2023
 
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5

Thermal stability of rhombohedral α- and monoclinic β-Ga2O3..:

Gucmann, Filip ; Nádaždy, Peter ; Hušeková, Kristína...
Materials Science in Semiconductor Processing.  156 (2023)  - p. 107289 , 2023
 
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6

Invited: Liquid-injection MOCVD-grown Ga2O3 on sapphire and..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
 
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11

InN crystal habit, structural, electrical, and optical prop..:

Gucmann, Filip ; Kučera, Michal ; Hasenöhrl, Stanislav...
Semiconductor Science and Technology.  36 (2021)  7 - p. 075025 , 2021
 
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15

Annealing effect of surface-activated bonded diamond/Si int..:

Liang, Jianbo ; Zhou, Yan ; Masuya, Satoshi...
Diamond and Related Materials.  93 (2019)  - p. 187-192 , 2019
 
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