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Gwoziecki, R.
61  Ergebnisse:
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1

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Volta..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Vandendaele, W. ; Leurquin, C. ; Lavieville, R.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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2

Drain voltage impact on charge redistribution in GaN-on-Si ..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Leurquin, C. ; Vandendaele, W. ; Gwoziecki, R.... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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3

Influence of AlGaN n-type doping and AlN thickness on the t..:

Piotrowicz, C. ; Mohamad, B. ; Malbert, N....
Solid-State Electronics.  201 (2023)  - p. 108594 , 2023
Link: https://doi.org/10.1016/..
 
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4

Impact of post-deposition anneal on ALD Al2O3/etched GaN in..:

Fernandes Paes Pinto Rocha, P. ; Vauche, L. ; Mohamad, B....
Power Electronic Devices and Components.  4 (2023)  - p. 100033 , 2023
Link: https://doi.org/10.1016/..
 
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5

New insights into low frequency noise (LFN) sources analysi..:

Kom Kammeugne, R. ; Theodorou, C. ; Leroux, C....
Solid-State Electronics.  200 (2023)  - p. 108555 , 2023
Link: https://doi.org/10.1016/..
 
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6

Deep Insights into Recessed Gate MOS-HEMT Technology for Po..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mohamad, B. ; Royer, C. Le ; Rigaud-Minet, F.... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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7

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Le Royer, C. ; Mohamad, B. ; Biscarrat, J.... - p. 49-52 , 2022
Link: https://doi.org/10.1109/..
 
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8

Role of free holes in nBTI degradation in GaN-on-Si MOS-cha..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Vandendaele, W. ; Jaud, M.-A. ; Viey, A. G.... - p. 345-348 , 2022
Link: https://doi.org/10.1109/..
 
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9

Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-..:

Jaud, M. -A. ; Vandendaele, W. ; Rrustemi, B....
IEEE Transactions on Electron Devices.  69 (2022)  2 - p. 669-674 , 2022
Link: https://doi.org/10.1109/..
 
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10

Effect of doping on Al2O3/GaN MOS capacitance:

Rrustemi, B. ; Piotrowicz, C. ; Jaud, M-A....
Solid-State Electronics.  194 (2022)  - p. 108356 , 2022
Link: https://doi.org/10.1016/..
 
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11

A comprehensive analysis of AlN spacer and AlGaN n-doping e..:

Piotrowicz, C. ; Mohamad, B. ; Rrustemi, B....
Solid-State Electronics.  194 (2022)  - p. 108322 , 2022
Link: https://doi.org/10.1016/..
 
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12

Accurate statistical extraction of AlGaN/GaN HEMT device pa..:

Kom Kammeugne, R. ; Leroux, C. ; Cluzel, J....
Solid-State Electronics.  184 (2021)  - p. 108078 , 2021
Link: https://doi.org/10.1016/..
 
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13

Thorough Investigation of Low Frequency Noise Mechanisms in..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Kammeugne, R. Kom ; Theodorou, C. ; Leroux, C.... - p. 39.4.1-39.4.4 , 2021
Link: https://doi.org/10.1109/..
 
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14

In depth TCAD analysis of threshold voltage on GaN-on-Si MO..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jaud, M. -A. ; Vandendaele, W. ; Rrustemi, B.... - p. 319-322 , 2021
Link: https://doi.org/10.23919..
 
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15

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Viey, A.G. ; Vandendaele, W. ; Jaud, M.-A.... - p. 4.3.1-4.3.4 , 2019
Link: https://doi.org/10.1109/..
 
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