Personensuche
X
?
2023 IEEE International Reliability Physics Symposium (IRPS) ,
1
Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Volta..:
, In:
?
2023 IEEE International Reliability Physics Symposium (IRPS) ,
2
Drain voltage impact on charge redistribution in GaN-on-Si ..:
, In:
?
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ,
6
Deep Insights into Recessed Gate MOS-HEMT Technology for Po..:
, In:
?
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
7
Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:
, In:
?
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
8
Role of free holes in nBTI degradation in GaN-on-Si MOS-cha..:
, In:
?
2021 IEEE International Electron Devices Meeting (IEDM) ,
13
Thorough Investigation of Low Frequency Noise Mechanisms in..:
, In:
?
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
14
In depth TCAD analysis of threshold voltage on GaN-on-Si MO..:
, In:
?
2019 IEEE International Electron Devices Meeting (IEDM) ,
15