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Habchi, R.
96  Ergebnisse:
Personensuche X
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1

Highly porous and flexible capacitive humidity sensor based..:

Alrammouz, R. ; Podlecki, J. ; Vena, A....
Sensors and Actuators B: Chemical.  298 (2019)  - p. 126892 , 2019
Link: https://doi.org/10.1016/..
 
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2

High photodegradation and antibacterial activity of BN–Ag/T..:

Nasr, M. ; Soussan, L. ; Viter, R....
New Journal of Chemistry.  42 (2018)  2 - p. 1250-1259 , 2018
Link: https://doi.org/10.1039/..
 
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3

Tunable properties of GO-doped CoFe2O4 nanofibers elaborate..:

Eid, C. ; Assaf, E. ; Habchi, R...
RSC Advances.  5 (2015)  118 - p. 97849-97854 , 2015
Link: https://doi.org/10.1039/..
 
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4

Electrospray deposition and characterization of cobalt oxid..:

Kilo, O. ; Jabbour, J. ; Habchi, R....
Materials Science in Semiconductor Processing.  24 (2014)  - p. 57-61 , 2014
Link: https://doi.org/10.1016/..
 
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5

Heat and mass transfer investigation of rotating hydrocarbo..:

Dgheim, J. ; Abdallah, M. ; Habchi, R..
Applied Mathematical Modelling.  36 (2012)  7 - p. 2935-2946 , 2012
Link: https://doi.org/10.1016/..
 
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6

Evaluation of the electrical properties under extreme stres..:

Sidawi, J. ; Abboud, N. ; Jelian, G...
Microelectronics International.  28 (2011)  1 - p. 12-16 , 2011
Link: https://doi.org/10.1108/..
 
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7

The effect of reverse current on the dark properties of pho..:

Sidawi, J. ; Habchi, R. ; Abboud, N....
Energy Procedia.  6 (2011)  - p. 743-749 , 2011
Link: https://doi.org/10.1016/..
 
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8

VDMOSFET reliability dependence on the integrated drain‐sou..:

El Bitar, R. ; Habchi, R. ; Salame, C....
Microelectronics International.  26 (2009)  1 - p. 33-36 , 2009
Link: https://doi.org/10.1108/..
 
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9

Switching times variation of MOSFET devices with temperatur..:

Habchi, R. ; Salame, C. ; El Bitar, R..
Microelectronics Journal.  39 (2008)  5 - p. 828-831 , 2008
Link: https://doi.org/10.1016/..
 
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10

Silicon MOSFET devices electrical parameters evolution at h..:

Salame, C. ; Habchi, R.
Microelectronics International.  25 (2007)  1 - p. 21-24 , 2007
Link: https://doi.org/10.1108/..
 
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11

Switching times variation of power MOSFET devices after ele..:

Habchi, R. ; Salame, C. ; Mialhe, P..
Microelectronics Reliability.  47 (2007)  8 - p. 1296-1299 , 2007
Link: https://doi.org/10.1016/..
 
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12

Temperature dependence of silicon power MOSFETs switching p..:

Habchi, R. ; Salame, C. ; Nsouli, B..
Microelectronics International.  23 (2006)  2 - p. 21-23 , 2006
Link: https://doi.org/10.1108/..
 
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13

Temperature dependence of a silicon power device switching ..:

Habchi, R. ; Salame, C. ; Khoury, A..
Applied Physics Letters.  88 (2006)  15 - p. , 2006
Link: https://doi.org/10.1063/..
 
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14

A faster power MOSFET device with electrical stress treatme..:

Salame, C. ; Habchi, R. ; Tazibt, W...
Microelectronics International.  22 (2005)  2 - p. 35-37 , 2005
Link: https://doi.org/10.1108/..
 
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15

Highly porous and flexible capacitive humidity sensor based..:

Alrammouz, R ; Podlecki, Jean ; Vena, A...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.snb.2019.126892.  , 2019
Link: https://hal.science/hal-..
 
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