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Haendler, Sebastien
36  Ergebnisse:
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1

Static and LFN/RTN Local and Global Variability Analysis Us..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),
Gauthier, Owen ; Haendler, Sebastien ; Beucher, Ronan... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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2

Applicability of the Carrier Number Fluctuations Model for ..:

, In: 2023 International Conference on Noise and Fluctuations (ICNF),
Gauthier, Owen ; Haendler, Sebastien ; Rafhay, Quentin. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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3

Universality of trap-induced mobility fluctuations between ..:

Gauthier, Owen ; Haendler, Sébastien ; Rafhay, Quentin.
Applied Physics Letters.  122 (2023)  23 - p. , 2023
Link: https://doi.org/10.1063/..
 
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4

18nm FDSOI Enhanced Device Platform for ULP/ULL MCUs:

, In: 2022 International Electron Devices Meeting (IEDM),
Weber, Olivier ; Min, Doohong ; Villaret, Alexandre... - p. 27.2.1-27.2.4 , 2022
Link: https://doi.org/10.1109/..
 
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5

Enhanced statistical detection of random telegraph noise in..:

Gauthier, Owen ; Haendler, Sébastien ; Scheer, Patrick...
Solid-State Electronics.  194 (2022)  - p. 108320 , 2022
Link: https://doi.org/10.1016/..
 
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6

Front and back channels coupling and transport on 28 nm FD-..:

Paz, Bruna Cardoso ; Cassé, Mikaël ; Haendler, Sebastien...
Solid-State Electronics.  186 (2021)  - p. 108071 , 2021
Link: https://doi.org/10.1016/..
 
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7

Integrated Variability Measurements of 28 nm FDSOI MOSFETs ..:

, In: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS),
Paz, Bruna Cardoso ; Guevel, Loick Le ; Casse, Mikael... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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8

Sub-threshold 10T SRAM bit cell with read/write XY selectio:

Feki, Anis ; Allard, Bruno ; Turgis, David...
Solid-State Electronics.  106 (2015)  - p. 1-11 , 2015
Link: https://doi.org/10.1016/..
 
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9

Dynamic variability in 14nm FD-SOI MOSFETs and transient si..:

Theodorou, Christoforos G. ; Ioannidis, Eleftherios G. ; Haendler, Sebastien..
Solid-State Electronics.  111 (2015)  - p. 100-103 , 2015
Link: https://doi.org/10.1016/..
 
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10

65nm Low Power (LP) SOI Technology on High Resistivity (HR)..:

Raynaud, Christine ; Haendler, Sebastien ; Guegan, Georges...
ECS Transactions.  19 (2009)  4 - p. 257-264 , 2009
Link: https://doi.org/10.1149/..
 
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11

Bandgap Engineering in SiGe:C HBTs For Power Amplifier Appl..:

Jouan, Sebastien ; Talbot, Alexandre ; Haendler, Sebastien...
ECS Transactions.  3 (2006)  7 - p. 913-918 , 2006
Link: https://doi.org/10.1149/..
 
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12

Low frequency noise and hot-carrier reliability in advanced..:

Dieudonné, François ; Haendler, Sébastien ; Jomaah, Jalal.
Solid-State Electronics.  48 (2004)  6 - p. 985-997 , 2004
Link: https://doi.org/10.1016/..
 
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13

Low frequency noise in 0.12 μm partially and fully depleted..:

Dieudonné, François ; Haendler, Sébastien ; Jomaah, Jalal.
Microelectronics Reliability.  43 (2003)  2 - p. 243-248 , 2003
Link: https://doi.org/10.1016/..
 
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14

Kink-Related Excess Noise in Deep Submicron Partially and M..:

Haendler, Sébastien ; Jomaah, Jalal ; Balestra, Francis..
Japanese Journal of Applied Physics.  39 (2000)  4S - p. 2261 , 2000
Link: https://doi.org/10.1143/..
 
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15

Static and LFN/RTN Local and Global Variability Analysis Us..:

Gauthier, Owen ; Haendler, Sébastien ; Beucher, Ronan...
info:eu-repo/semantics/altIdentifier/doi/10.1109/ICMTS55420.2023.10094087.  , 2023
Link: https://hal.science/hal-..
 
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