E-LIB Suche - Ergebnisse für: Hao, Maosheng

1

An artificial neural network potential for uranium metal at..:

Hao 郝, Maosheng 茂生 ; Guan 管, Pengfei 鹏飞
Chinese Physics B. 32 (2023) 9 - p. 098401 , 2023

Link: https://doi.org/10.1088/..

2

Maskless lateral epitaxial over growth of GaN films on in s..:

Hao, Maosheng ; Egawa, Takashi ; Ishikawa, Hiroyasu
Journal of Crystal Growth. 285 (2005) 4 - p. 466-472 , 2005

Link: https://doi.org/10.1016/..

3

Effect of Various Interlayers on Epiwafer Bowing in AlGaN/G..:

Sakai, Masahiro ; Egawa, Takashi ; Hao, Maosheng.
Japanese Journal of Applied Physics. 43 (2004) 12 - p. 8019-8023 , 2004

Link: https://doi.org/10.1143/..

4

Influence of Growth Temperature on Quaternary AlInGaN Epila..:

Liu, Yang ; Egawa, Takashi ; Ishikawa, Hiroyasu..
Japanese Journal of Applied Physics. 43 (2004) 5R - p. 2414 , 2004

Link: https://doi.org/10.1143/..

5

High-temperature-grown quaternary AlInGaN epilayers and mul..:

Liu, Yang ; Egawa, Takashi ; Ishikawa, Hiroyasu...
Journal of Crystal Growth. 264 (2004) 1-3 - p. 159-164 , 2004

Link: https://doi.org/10.1016/..

6

Investigation on the P-Type Activation Mechanism in Mg-dope..:

Youn, Doo-Hyeb ; Lachab, Mohamed ; Hao, Maosheng...
Japanese Journal of Applied Physics. 38 (1999) 2R - p. 631 , 1999

Link: https://doi.org/10.1143/..

7

Comparison and Investigation of Ohmic Characteristics in th..:

Youn, Doo-Hyeb ; Hao, Maosheng ; Naoi, Yoshiki..
Japanese Journal of Applied Physics. 37 (1998) 9R - p. 4667 , 1998

Link: https://doi.org/10.1143/..

8

Lateral Overgrowth of Thick GaN on Patterned GaN Substrate ..:

Wang, Jie ; Tottori, Satoru ; Sato, Hisao...
Japanese Journal of Applied Physics. 37 (1998) 8R - p. 4475 , 1998

Link: https://doi.org/10.1143/..

9

Ohmic Contact to P-Type GaN:

Youn, Doo-Hyeb ; Hao, Maosheng ; Sato, Hisao...
Japanese Journal of Applied Physics. 37 (1998) 4R - p. 1768 , 1998

Link: https://doi.org/10.1143/..

10

Surface Pretreatment of Bulk GaN for Homoepitaxial Growth b..:

Sato, Hisao ; Sugahara, Tomoya ; Hao, Maosheng...
Japanese Journal of Applied Physics. 37 (1998) 2R - p. 626 , 1998

Link: https://doi.org/10.1143/..

11

Direct Evidence that Dislocations are Non-Radiative Recombi..:

Sugahara, Tomoya ; Sato, Hisao ; Hao, Maosheng...
Japanese Journal of Applied Physics. 37 (1998) 4A - p. L398 , 1998

Link: https://doi.org/10.1143/..

12

Role of Dislocation in InGaN Phase Separation:

Sugahara, Tomoya ; Hao, Maosheng ; Wang, Tao...
Japanese Journal of Applied Physics. 37 (1998) 10B - p. L1195 , 1998

Link: https://doi.org/10.1143/..

13

A theoretical model for the tilt of the epilayers:

Hao, Maosheng ; Shao, Chunlin ; Soga, Tetsuo...
Journal of Crystal Growth. 178 (1997) 3 - p. 276-279 , 1997

Link: https://doi.org/10.1016/..

14

Porous GaAs formed by a two-step anodization process:

Hao, Maosheng ; Uchida, Hideo ; Shao, Chunlin...
Journal of Crystal Growth. 179 (1997) 3-4 - p. 661-664 , 1997

Link: https://doi.org/10.1016/..

15

Characterization and Improvement of GaAs Layers Grownon Si ..:

Hao, Maosheng ; Shao, Chunlin ; Soga, Tetsuo...
Japanese Journal of Applied Physics. 35 (1996) 8A - p. L960 , 1996

Link: https://doi.org/10.1143/..