E-LIB Suche - Ergebnisse für: Hao, Weibing

1

2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with L..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Hao, Weibing ; Xu, Guangwei ; Wu, Feihong... - p. 244-247 , 2024

2

Vertical GaN Junction Barrier Schottky Diode with p-NiO/n-G..:

, In: Conference Proceedings of the 2023 3rd International Joint Conference on Energy, Electrical and Power Engineering; Lecture Notes in Electrical Engineering,

Li, Shaocheng ; Yang, Shu ; Hao, Weibing.. - p. 500-504 , 2024

Link: https://doi.org/10.1007/..

3

Improved β-Ga2O3 Schottky Barrier Diodes Featuring p-NiO Gr..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Han, Zhao ; Hao, Weibing ; Liu, Jinyang... - p. 232-235 , 2024

Link: https://doi.org/10.1109/..

4

Realizing High Stability of Threshold Voltage in NiO/β-Ga2O..:

Jiang, Zhuolin ; Deng, Hongru ; Zhou, Xuanze...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1598-1605 , 2024

Link: https://doi.org/10.1109/..

5

Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engi..:

Wen, Junpeng ; Hao, Weibing ; Han, Zhao...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1606-1617 , 2024

Link: https://doi.org/10.1109/..

6

8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by ..:

Wu, Feihong ; Han, Zhao ; Liu, Jinyang...
Applied Physics Express. 17 (2024) 3 - p. 036504 , 2024

Link: https://doi.org/10.35848..

7

High breakdown voltage of 1.3 kV and low turn-on voltage of..:

Li, Qiuyan ; Hao, Weibing ; Liu, Jinyang...
Applied Physics Express. 17 (2024) 6 - p. 066501 , 2024

Link: https://doi.org/10.35848..

8

Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junct..:

Li, Shaocheng ; Yang, Shu ; Han, Zhao...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 548-554 , 2024

Link: https://doi.org/10.1109/..

9

Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Cond..:

Hao, Weibing ; Wu, Feihong ; Li, Wenshen...
IEEE Transactions on Electron Devices. 70 (2023) 4 - p. 2129-2134 , 2023

Link: https://doi.org/10.1109/..

10

Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photo..:

Ding, Mengfan ; Hao, Weibing ; Yu, Shunjie...
IEEE Electron Device Letters. 44 (2023) 2 - p. 277-280 , 2023

Link: https://doi.org/10.1109/..

11

Vertical β-Ga2O3 power electronics:

Xu, Guangwei ; Wu, Feihong ; Liu, Qi...
Journal of Semiconductors. 44 (2023) 7 - p. 070301 , 2023

Link: https://doi.org/10.1088/..

12

β-Ga2O3 Junction Barrier Schottky Diode with NiO p-well Flo..:

He, Qimin ; Hao, Weibing ; Li, Qiuyan...
Chinese Physics B. , 2023

Link: https://doi.org/10.1088/..

13

A Surface Potential Based Compact Model for β-Ga2O3 Power M..:

, In: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Zhou, Kai ; Zhou, Xuanze ; Miao, Songming... - p. 159-160 , 2023

Link: https://doi.org/10.1109/..

14

Oxygen vacancies and local amorphization introduced by high..:

Liu, Jinyang ; Han, Zhao ; Ren, Lei...
Applied Physics Letters. 123 (2023) 11 - p. , 2023

Link: https://doi.org/10.1063/..

15

2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier D..:

Han, Zhao ; Jian, Guangzhong ; Zhou, Xuanze...
IEEE Electron Device Letters. 44 (2023) 10 - p. 1680-1683 , 2023

Link: https://doi.org/10.1109/..