E-LIB Suche - Ergebnisse für: Hasanli, Turan

1

A Survey on Privacy Preservation Methods in Future Vehicula..:

, In: 2023 11th International Conference on Information and Communication Technology (ICoICT),

Eghtessad, Shayan ; Hasanli, Turan ; Huynh, Richard... - p. 319-325 , 2023

2

Optical constants and interband transitions of anisotropic ..:

IŞIK, MEHMET ; Hasanlı, Nızamı ; Turan, Raşit
IŞIK M., Gasanly N., TURAN R., "Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry", JOURNAL OF ALLOYS AND COMPOUNDS, cilt.549, ss.179-183, 2013. , 2013

Link: https://hdl.handle.net/1..

3

Interband transitions in gallium sulfide layered single cry..:

IŞIK, MEHMET ; Hasanlı, Nızamı ; Turan, Raşit
IŞIK M., Gasanly N., TURAN R., "Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements", PHYSICA B-CONDENSED MATTER, cilt.408, ss.43-45, 2013. , 2013

Link: https://hdl.handle.net/1..

4

Optical constants and interband transitions of anisotropic ..:

IŞIK, MEHMET ; Hasanlı, Nızamı ; Turan, Raşit
IŞIK M., Gasanly N., TURAN R., "Optical constants and interband transitions of anisotropic layered structured Tl2GaInS4 crystals by spectroscopic ellipsometry", JOURNAL OF ALLOYS AND COMPOUNDS, cilt.549, ss.179-183, 2013. , 2013

Link: https://hdl.handle.net/1..

5

Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single..:

YILDIRIM, TACETTİN ; Hasanlı, Nızamı ; Turan, Raşit
YILDIRIM T., HASANLI N., TURAN R., "Trapping Center Parameters in N-Implanted Tl2Ga2S3Se Single Crystals by Thermally Stimulated Currents Measurements", ACTA PHYSICA POLONICA A, cilt.123, ss.766-769, 2013. , 2013

Link: https://hdl.handle.net/1..

6

Interband transitions in gallium sulfide layered single cry..:

IŞIK, MEHMET ; Hasanlı, Nızamı ; Turan, Raşit
IŞIK M., Gasanly N., TURAN R., "Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements", PHYSICA B-CONDENSED MATTER, cilt.408, ss.43-45, 2013. , 2013

Link: https://hdl.handle.net/1..

7

Spectroscopic ellipsometry study of above-band gap optical ..:

IŞIK, MEHMET ; Hasanlı, Nızamı ; Turan, Raşit
IŞIK M., Gasanly N., TURAN R., "Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals", PHYSICA B-CONDENSED MATTER, cilt.407, ss.4193-4197, 2012. , 2012

Link: https://hdl.handle.net/1..

8

Spectroscopic ellipsometry study of above-band gap optical ..:

IŞIK, MEHMET ; Hasanlı, Nızamı ; Turan, Raşit
IŞIK M., Gasanly N., TURAN R., "Spectroscopic ellipsometry study of above-band gap optical constants of layered structured TlGaSe2, TlGaS2 and TlInS2 single crystals", PHYSICA B-CONDENSED MATTER, cilt.407, ss.4193-4197, 2012. , 2012

Link: https://hdl.handle.net/1..

9

Low-temperature visible photolummescence and optical absorp..:

Güler, Işıkhan ; Goksen, K ; Hasanlı, Nızamı.
Guler I., Goksen K., Gasanly N., Turan R., "Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor", PHYSICA B-CONDENSED MATTER, cilt.395, ss.116-120, 2007. , 2007

Link: https://hdl.handle.net/1..

10

Low-temperature visible photolummescence and optical absorp..:

Güler, Işıkhan ; Goksen, K ; Hasanlı, Nızamı.
Guler I., Goksen K., Gasanly N., Turan R., "Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor", PHYSICA B-CONDENSED MATTER, cilt.395, ss.116-120, 2007. , 2007

Link: https://hdl.handle.net/1..

11

Excitation intensity and temperature-dependent photolumines..:

Goksen, K ; Hasanlı, Nızamı ; Turan, Raşit
Goksen K., Gasanly N., Turan R., "Excitation intensity and temperature-dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals", CRYSTAL RESEARCH AND TECHNOLOGY, cilt.41, ss.822-828, 2006. , 2006

Link: https://hdl.handle.net/1..