E-LIB Suche - Ergebnisse für: Hasegawa, F.

1

OC05.06: Multisite assessment of the impact of a prenatal t..:

Winters, P. ; Curnow, K. ; Benachi, A....
Ultrasound in Obstetrics & Gynecology. 58 (2021) S1 - p. 16-16 , 2021

Link: https://doi.org/10.1002/..

2

Halogen Transport Vapor Phase Epitaxy of III–V Materials:

, In: Reference Module in Materials Science and Materials Engineering,

Usui, A. ; Koukitu, A. ; Kumagai, Y.. , 2016

Link: https://doi.org/10.1016/..

3

Comparison of clinical features of preschool and school-age..:

Horiuchi, F. ; Hasegawa, F. ; Kawabe, K...
Neuropsychiatrie de l'Enfance et de l'Adolescence. 60 (2012) 5 - p. S205 , 2012

Link: https://doi.org/10.1016/..

4

Improvement of crystal quality of AlN and AlGaN epitaxial l..:

Niikura, E. ; Murakawa, K. ; Hasegawa, F..
Journal of Crystal Growth. 298 (2007) - p. 345-348 , 2007

Link: https://doi.org/10.1016/..

5

Temperature dependence of electroluminescence from silicon ..:

Li, Cheng ; Lai, Hongkai ; Chen, Songyan..
Journal of Applied Physics. 100 (2006) 2 - p. , 2006

Link: https://doi.org/10.1063/..

6

Temperature dependence of electroluminescence from Si-based..:

Li, Cheng ; Suemasu, T. ; Hasegawa, F.
Journal of Luminescence. 118 (2006) 2 - p. 330-334 , 2006

Link: https://doi.org/10.1016/..

7

Improvement of luminescence from β-FeSi2 particles embedded..:

Li, Cheng ; Lai, Hongkai ; Chen, Songyan..
Journal of Crystal Growth. 290 (2006) 1 - p. 176-179 , 2006

Link: https://doi.org/10.1016/..

8

Room-temperature electroluminescence of a Si-based p-i-n di..:

Li, Cheng ; Suemasu, T. ; Hasegawa, F.
Journal of Applied Physics. 97 (2005) 4 - p. , 2005

Link: https://doi.org/10.1063/..

9

Hole mobility of p-type β-FeSi2 thin films grown from Si∕Fe..:

Takakura, K. ; Ohyama, H. ; Takarabe, K...
Journal of Applied Physics. 97 (2005) 9 - p. , 2005

Link: https://doi.org/10.1063/..

10

Influence of β-FeSi2 particle size and Si growth rate on 1...:

Ozawa, Y. ; Ohtsuka, T. ; Li, Cheng..
Journal of Applied Physics. 95 (2004) 10 - p. 5483-5486 , 2004

Link: https://doi.org/10.1063/..

11

Growth of Si∕β-FeSi2∕Si double-heterostructures on Si(111) ..:

Takauji, M. ; Seki, N. ; Suemasu, T...
Journal of Applied Physics. 96 (2004) 5 - p. 2561-2565 , 2004

Link: https://doi.org/10.1063/..

12

Reflection and absorption spectra of β-FeSi2 under pressure:

Mori, Y ; Sumida, Y ; Takarabe, K...
Thin Solid Films. 461 (2004) 1 - p. 171-173 , 2004

Link: https://doi.org/10.1016/..

13

Epitaxial growth of semiconducting β-FeSi2 and its applicat..:

Suemasu, T ; Takakura, K ; Li, Cheng...
Thin Solid Films. 461 (2004) 1 - p. 209-218 , 2004

Link: https://doi.org/10.1016/..

14

Influence of boron-doped Si cap layer on the photoluminesce..:

Li, Cheng ; Ohtsuka, T. ; Ozawa, Y...
Journal of Applied Physics. 94 (2003) 3 - p. 1518-1520 , 2003

Link: https://doi.org/10.1063/..

15

Conduction type and defect levels of β-FeSi2 films grown by..:

Seki, N. ; Takakura, K. ; Suemasu, T..
Materials Science in Semiconductor Processing. 6 (2003) 5-6 - p. 307-309 , 2003

Link: https://doi.org/10.1016/..