E-LIB Suche - Ergebnisse für: Hatakoshi, Gen-ichi

1

Imaginary-shifted expression of Gaussian beams as rigorous ..:

Hatakoshi, Gen-ichi ; Kawakami, Shojiro
Japanese Journal of Applied Physics. 63 (2024) 3 - p. 03SP30 , 2024

Link: https://doi.org/10.35848..

2

High-Order Gaussian Beams and Optical Vortices as Rigorous ..:

, In: 2023 28th Microoptics Conference (MOC),

Hatakoshi, Gen-Ichi ; Kawakami, Shojiro - p. 1-2 , 2023

Link: https://doi.org/10.23919..

3

Analysis of Auger Recombination in Wurtzite InGaN:

Hatakoshi, Gen-ichi ; Nunoue, Shinya
Japanese Journal of Applied Physics. 52 (2013) 8S - p. 08JG17 , 2013

Link: https://doi.org/10.7567/..

4

Analysis of Auger Recombination for Wurtzite InGaN:

Hatakoshi, Gen-ichi ; Nunoue, Shinya
Applied Physics Express. 5 (2012) 7 - p. 071001 , 2012

Link: https://doi.org/10.1143/..

5

Photonic Devices:

, In: Wide Bandgap Semiconductors,

Kawakami, Yoichi ; Kamiyama, Satoshi ; Hatakoshi, Gen-Ichi... - p. 97-230 , 2007

Link: https://doi.org/10.1007/..

6

Evaluation of incorporation efficiency of group V source ga..:

Kushibe, Mitsuhiro ; Hashimoto, Rei ; Ezaki, Mizunori...
Journal of Crystal Growth. 298 (2007) - p. 658-662 , 2007

Link: https://doi.org/10.1016/..

7

Device Simulator for Designing High-Efficiency Light-Emitti..:

Hatakoshi, Gen-ichi ; Hattori, Yasushi ; Saito, Shinji..
Japanese Journal of Applied Physics. 46 (2007) 8S - p. 5419 , 2007

Link: https://doi.org/10.1143/..

8

Terahertz Wave Enhanced Transmission through a Single Subwa..:

Ishihara, Kunihiko ; Hatakoshi, Gen-ichi ; Ikari, Tomofumi...
Japanese Journal of Applied Physics. 44 (2005) 7L - p. L1005 , 2005

Link: https://doi.org/10.1143/..

9

Analysis of Beam Quality Factor for Semiconductor Lasers:

Hatakoshi, Gen-ichi
Optical Review. 10 (2003) 4 - p. 307-314 , 2003

Link: https://doi.org/10.1007/..

10

Polarization Dependence Analysis of Optical Loss in Small-A..:

Gen-ichi Hatakoshi, Gen-ichi Hatakoshi ; Hideto Furuyama, Hideto Furuyama
Japanese Journal of Applied Physics. 40 (2001) 3S - p. 1548 , 2001

Link: https://doi.org/10.1143/..

11

Thermal Analysis for GaN Laser Diodes:

Gen-ichi Hatakoshi, Gen-ichi Hatakoshi ; Masaaki Onomura, Masaaki Onomura ; Masahiro Yamamoto, Masahiro Yamamoto...
Japanese Journal of Applied Physics. 38 (1999) 5R - p. 2764 , 1999

Link: https://doi.org/10.1143/..

12

Analysis of Device Characteristics for InGaN Semiconductor ..:

Gen-ichi Hatakoshi, Gen-ichi Hatakoshi ; Masaaki Onomura, Masaaki Onomura ; Shinji Saito, Shinji Saito..
Japanese Journal of Applied Physics. 38 (1999) 3S - p. 1780 , 1999

Link: https://doi.org/10.1143/..

13

Effect of metal type on the contacts to n-type and p-type G..:

Rennie, John ; Onomura, Masaaki ; Nunoue, Shin-ya...
Journal of Crystal Growth. 189-190 (1998) - p. 711-715 , 1998

Link: https://doi.org/10.1016/..

14

Schottky Barrier Height Reduction for p-ZnSe Contacts by Su..:

Onomura, Masaaki ; Saito, Shinji ; Rennie, John...
Japanese Journal of Applied Physics. 35 (1996) 2S - p. 1428 , 1996

Link: https://doi.org/10.1143/..

15

The Influence of Surface Treatment on the Qualityof Pd/Au C..:

Rennie, John ; Onomura, Masaaki ; Nishikawa, Yukie...
Japanese Journal of Applied Physics. 35 (1996) 3R - p. 1664 , 1996

Link: https://doi.org/10.1143/..