E-LIB Suche - Ergebnisse für: Hatui, Nirupam

1

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess H..:

Akso, Emre ; Collins, Henry ; Khan, Kamruzzaman...
IEEE Microwave and Wireless Technology Letters. 34 (2024) 2 - p. 183-186 , 2024

Link: https://doi.org/10.1109/..

2

Demonstration of HCl-Based Selective Wet Etching for N-Pola..:

Kayede, Emmanuel ; Akso, Emre ; Romanczyk, Brian...
Crystals. 14 (2024) 6 - p. 485 , 2024

Link: https://doi.org/10.3390/..

3

Record D-Band Performance From Prematched N-Polar GaN-on-Sa..:

Akso, Emre ; Li, Weiyi ; Clymore, Christopher...
IEEE Microwave and Wireless Technology Letters. 34 (2024) 4 - p. 395-398 , 2024

Link: https://doi.org/10.1109/..

4

N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Conta..:

Collins, Henry ; Akso, Emre ; Clymore, Christopher J....
IEEE Microwave and Wireless Technology Letters. , 2024

Link: https://doi.org/10.1109/..

5

N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 G..:

Collins, Henry ; Akso, Emre ; Hatui, Nirupam...
IEEE Microwave and Wireless Technology Letters. 34 (2024) 3 - p. 287-290 , 2024

Link: https://doi.org/10.1109/..

6

First Demonstration of an N-Polar InAlGaN/GaN HEMT:

Hamwey, Robert ; Hatui, Nirupam ; Akso, Emre...
IEEE Electron Device Letters. 45 (2024) 3 - p. 328-331 , 2024

Link: https://doi.org/10.1109/..

7

Record 1 W output power from a single N-Polar GaN MISHEMT a..:

, In: 2023 Device Research Conference (DRC),

Akso, Emre ; Clymore, Christopher ; Liu, Wenjian... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

8

First Comparison of Active and Passive Load Pull at W-Band:

, In: 2023 101st ARFTG Microwave Measurement Conference (ARFTG),

Clymore, Christopher J. ; Akso, Emre ; Guidry, Matthew... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

9

GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET Wit..:

Raj, Aditya ; Krishna, Athith ; Romanczyk, Brian...
IEEE Electron Device Letters. 44 (2023) 1 - p. 9-12 , 2023

Link: https://doi.org/10.1109/..

10

Record RF Power Performance at 94 GHz From Millimeter-Wave ..:

Li, Weiyi ; Romanczyk, Brian ; Guidry, Matthew...
IEEE Transactions on Electron Devices. 70 (2023) 4 - p. 2075-2080 , 2023

Link: https://doi.org/10.1109/..

11

First Demonstration of Four-Finger N-polar GaN HEMT Exhibit..:

Akso, Emre ; Collins, Henry ; Clymore, Christopher...
IEEE Microwave and Wireless Technology Letters. 33 (2023) 6 - p. 683-686 , 2023

Link: https://doi.org/10.1109/..

12

Improved N-polar GaN mm-wave Linearity, Efficiency, and Noi..:

, In: 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,

Guidry, Matthew ; Shrestha, Pawana ; Liu, Wenjian... - p. 291-294 , 2022

Link: https://doi.org/10.1109/..

13

Acceptor traps as the source of holes in p-type N-polar GaN..:

Krishna, Athith ; Raj, Aditya ; Hatui, Nirupam...
Applied Physics Letters. 120 (2022) 13 - p. , 2022

Link: https://doi.org/10.1063/..

14

Demonstration of device-quality 60% relaxed In0.2Ga0.8N on ..:

Wurm, Christian ; Collins, Henry ; Hatui, Nirupam...
Journal of Applied Physics. 131 (2022) 1 - p. , 2022

Link: https://doi.org/10.1063/..

15

Demonstration of device-quality InGaN grown on porous GaN t..:

, In: 2022 Compound Semiconductor Week (CSW),

Wurm, Christian ; Collins, Henry ; Hatui, Nirupam... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..