E-LIB Suche - Ergebnisse für: Hayafuji, N.

1

Reliability Improvement of AlInAs/GaInAs High Electron Mobi..:

Hayafuji, N. ; Yamamoto, Y. ; Ishida, T..
Journal of The Electrochemical Society. 145 (1998) 8 - p. 2951-2954 , 1998

Link: https://doi.org/10.1149/..

2

Manufacturability and reliability of InP HEMTs:

Sonoda, T. ; Yamamoto, Y. ; Hayafuji, N....
Solid-State Electronics. 41 (1997) 10 - p. 1621-1628 , 1997

Link: https://doi.org/10.1016/..

3

Degradation mechanism of the AlInAs/GaInAs high electron mo..:

Hayafuji, N. ; Yamamoto, Y. ; Ishida, T..
Applied Physics Letters. 69 (1996) 26 - p. 4075-4077 , 1996

Link: https://doi.org/10.1063/..

4

Donor passivation in n-AllnAs layers by fluorine:

Yamamoto, Y. ; Hayafuji, N. ; Fujii, N....
Journal of Electronic Materials. 25 (1996) 5 - p. 685-690 , 1996

Link: https://doi.org/10.1007/..

5

Thermal stability of AlInAs/GaInAs/InP heterostructures:

Hayafuji, N. ; Yamamoto, Y. ; Yoshida, N....
Applied Physics Letters. 66 (1995) 7 - p. 863-865 , 1995

Link: https://doi.org/10.1063/..

6

Mechanism of Zn passivation in AlGaInP layer grown by metal..:

Kadoiwa, K. ; Kato, M. ; Motoda, T....
Journal of Crystal Growth. 145 (1994) 1-4 - p. 147-152 , 1994

Link: https://doi.org/10.1016/..

7

Atomic layer epitaxy of device quality AlGaAs and AlAs:

Hayafuji, N. ; Eldallal, G.M. ; Dip, A....
Applied Surface Science. 82-83 (1994) - p. 18-22 , 1994

Link: https://doi.org/10.1016/..

8

Atomic layer epitaxy of GaAs with a 2 μm/h growth rate:

Dip, Anthony ; Eldallal, Gamal M. ; Colter, Peter C...
Applied Physics Letters. 62 (1993) 19 - p. 2378-2380 , 1993

Link: https://doi.org/10.1063/..

9

Large-scale metalorganic chemical vapor deposition growth o..:

Mihashi, Y. ; Miyashita, M. ; Hayafuji, N....
Journal of Crystal Growth. 133 (1993) 3-4 - p. 281-288 , 1993

Link: https://doi.org/10.1016/..

10

Surface morphology improvement of GaAs-on-Si using a two-re..:

Nishimura, T. ; Kadoiwa, K. ; Hayafuji, N....
Journal of Crystal Growth. 107 (1991) 1-4 - p. 468-472 , 1991

Link: https://doi.org/10.1016/..

11

Study of initial buffer layer in GaAs-on-Si growth:

Kadoiwa, K. ; Nishimura, T. ; Hayafuji, N....
Journal of Crystal Growth. 115 (1991) 1-4 - p. 128-132 , 1991

Link: https://doi.org/10.1016/..

12

Effectiveness of AlGaAs/GaAs superlattices in reducing disl..:

Hayafuji, N. ; Ochi, S. ; Miyashita, M....
Journal of Crystal Growth. 93 (1988) 1-4 - p. 494-498 , 1988

Link: https://doi.org/10.1016/..

13

Growth of GaAs/AlGaAs quantum well structures using a large..:

Ochi, S. ; Hayafuji, N. ; Kajikawa, Y...
Journal of Crystal Growth. 77 (1986) 1-3 - p. 553-557 , 1986

Link: https://doi.org/10.1016/..

14

MOCVD GaAs growth on Ge (100) and Si (100) substrates:

Mizuguchi, K. ; Hayafuji, N. ; Ochi, S...
Journal of Crystal Growth. 77 (1986) 1-3 - p. 509-514 , 1986

Link: https://doi.org/10.1016/..

15

Highly uniform growth of GaAs and AlGaAs by large-capacity ..:

Hayafuji, N. ; Mizuguchi, K. ; Ochi, S..
Journal of Crystal Growth. 77 (1986) 1-3 - p. 281-285 , 1986

Link: https://doi.org/10.1016/..