E-LIB Suche - Ergebnisse für: Heime, K.

1

Effects of electron–phonon interaction and chemical shift o..:

Germain, M. ; Kartheuser, E. ; Gurskii, A. L....
Journal of Applied Physics. 91 (2002) 12 - p. 9827-9834 , 2002

2

Luminescence and lasing in GaN epitaxial layers and InGaN/G..:

Yablonskii, G.P. ; Lutsenko, E.V. ; Pavlovskii, V.N....
Materials Science and Engineering: B. 80 (2001) 1-3 - p. 322-326 , 2001

Link: https://doi.org/10.1016/..

3

Blue InGaN/GaN multiple-quantum-well optically pumped laser..:

Yablonskii, G. P. ; Lutsenko, E. V. ; Pavlovskii, V. N....
Applied Physics Letters. 79 (2001) 13 - p. 1953-1955 , 2001

Link: https://doi.org/10.1063/..

4

Concentric ring contacts used for the determination of cont..:

Rechid, J. ; Heime, K.
Solid-State Electronics. 44 (2000) 3 - p. 451-455 , 2000

Link: https://doi.org/10.1016/..

5

ZnSe/ZnMgSSe structures on ZnSSe substrates:

Krysa, A.B ; Korostelin, Yu.V ; Kozlovsky, V.I...
Journal of Crystal Growth. 214-215 (2000) - p. 355-358 , 2000

Link: https://doi.org/10.1016/..

6

Characterization of undoped and silicon-doped InGaN/GaN sin..:

Schineller, B. ; Lim, P. H. ; Yablonskii, G. P....
Journal of Electronic Materials. 29 (2000) 1 - p. 31-36 , 2000

Link: https://doi.org/10.1007/..

7

The role of impurity bands and electron–phonon interaction ..:

Gurskii, A.L ; Voitikov, S.V ; Hamadeh, H...
Journal of Crystal Growth. 214-215 (2000) - p. 567-571 , 2000

Link: https://doi.org/10.1016/..

8

Effect of above band-gap illumination on structure of free ..:

Rakovich, Yu. ; Bryja, L. ; Ciorga, M....
Thin Solid Films. 364 (2000) 1-2 - p. 287-290 , 2000

Link: https://doi.org/10.1016/..

9

MOVPE of AlGaAsSb using TTBAl as an alternative aluminum pr..:

Giesen, Ch ; Szymakowski, A ; Rushworth, S..
Journal of Crystal Growth. 221 (2000) 1-4 - p. 450-455 , 2000

Link: https://doi.org/10.1016/..

10

Conformal MOVPE of (Al)GaAs on silicon using alternative ch..:

Philippens, M ; Oligschlaeger, R ; Gerard, B...
Journal of Crystal Growth. 221 (2000) 1-4 - p. 225-230 , 2000

Link: https://doi.org/10.1016/..

11

ZnSe/ZnMgSSe QW structures grown by MOVPE on transparent Zn..:

Krysa, A.B. ; Korostelin, Yu.V. ; Kozlovsky, V.I....
Microelectronic Engineering. 51-52 (2000) - p. 19-26 , 2000

Link: https://doi.org/10.1016/..

12

InAs(PSb)-based "W" quantum well laser diodes emitting near..:

Joullié, A. ; Skouri, E. M. ; Garcia, M....
Applied Physics Letters. 76 (2000) 18 - p. 2499-2501 , 2000

Link: https://doi.org/10.1063/..

13

Reconstruction of excitonic spectrum during annealing of Zn..:

Gurskii, A. L. ; Hamadeh, H. ; Körfer, H....
Journal of Electronic Materials. 29 (2000) 4 - p. 430-435 , 2000

Link: https://doi.org/10.1007/..

14

Structural properties of MOVPE-grown ZnSe studied by X-ray ..:

Liu, Q ; Lakner, H ; Taudt, W...
Journal of Crystal Growth. 197 (1999) 3 - p. 507-512 , 1999

Link: https://doi.org/10.1016/..

15

Hot-electron energy relaxation, noise, and lattice strain i..:

Matulionis, A. ; Aninkevičius, V. ; Liberis, J....
Applied Physics Letters. 74 (1999) 13 - p. 1895-1897 , 1999

Link: https://doi.org/10.1063/..