Heinrichsdorff, F.
69  Ergebnisse:
Personensuche X
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1

A New Twin Flash™ Cell for 2 and 4 Bit Operation at 63nm Fe..:

, In: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Nagel, N. ; Boubekeur, H. ; Heinrichsdorff, F.... - p. None , 2007
 
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3

State-filling and renormalization in charged InGaAs/GaAs qu..:

Guffarth, F ; Heitz, R ; Kapteyn, C.M.A..
Physica E: Low-dimensional Systems and Nanostructures.  13 (2002)  2-4 - p. 278-282 , 2002
 
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4

Spectral Hole-Burning and Carrier-Heating Dynamics in Quant..:

Borri, P. ; Langbein, W. ; Hvam, J.M....
physica status solidi (b).  224 (2001)  2 - p. 419-423 , 2001
 
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5

Radiative Inter-Sublevel Transitions in InGaAs/AlGaAs Quant..:

Weber, A. ; Goede, K. ; Grundmann, M....
physica status solidi (b).  224 (2001)  3 - p. 833-837 , 2001
 
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6

Coherent versus incoherent dynamics in InAs quantum-dot act..:

Borri, P. ; Langbein, W. ; Hvam, J. M....
Journal of Applied Physics.  89 (2001)  11 - p. 6542-6544 , 2001
 
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9

Different temperature renormalizations for heavy and light-..:

Goñi, A.R ; Cantarero, A ; Scheel, H...
Solid State Communications.  116 (2000)  3 - p. 121-124 , 2000
 
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10

High-power quantum-dot lasers at 1100 nm:

Heinrichsdorff, F. ; Ribbat, Ch. ; Grundmann, M..
Applied Physics Letters.  76 (2000)  5 - p. 556-558 , 2000
 
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11

Surface flattening during MOCVD of thin GaAs layers coverin..:

Sellin, R ; Heinrichsdorff, F ; Ribbat, Ch...
Journal of Crystal Growth.  221 (2000)  1-4 - p. 581-585 , 2000
 
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12

Magnetoluminescence Study of Annealing Effects on the Elect..:

Goñi, A. R. ; Born, H. ; Heitz, R....
Japanese Journal of Applied Physics.  39 (2000)  7R - p. 3907 , 2000
 
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14

Time-resolved four-wave mixing in InAs/InGaAs quantum-dot a..:

Borri, P. ; Langbein, W. ; Hvam, J. M....
Applied Physics Letters.  76 (2000)  11 - p. 1380-1382 , 2000
 
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15

Magnetoluminescence of Annealed Self-Organized InGaAs/GaAs ..:

Born, H. ; Go�i, A.R. ; Heitz, R....
physica status solidi (b).  215 (1999)  1 - p. 313-318 , 1999
 
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