E-LIB Suche - Ergebnisse für: Helava, H

1

Determination of the concentration of impurities in GaN fro..:

Reshchikov, M. A. ; Vorobiov, M. ; Andrieiev, O....
Scientific Reports. 10 (2020) 1 - p. , 2020

Link: https://doi.org/10.1038/..

2

Two yellow luminescence bands in undoped GaN:

Reshchikov, M. A. ; McNamara, J. D. ; Helava, H...
Scientific Reports. 8 (2018) 1 - p. , 2018

Link: https://doi.org/10.1038/..

3

Structural, electrical and luminescent characteristics of u..:

Polyakov, A.Y. ; Yun, Jin-Hyeon ; Usikov, A.S....
Modern Electronic Materials. 3 (2017) 1 - p. 32-39 , 2017

Link: https://doi.org/10.1016/..

4

Solar water splitting with III-N nanocolumn structures:

Medvedev, O S ; Puzyk, M V ; Usikov, A S..
Journal of Physics: Conference Series. 917 (2017) - p. 052022 , 2017

Link: https://doi.org/10.1088/..

5

Evaluation of the concentration of point defects in GaN:

Reshchikov, M. A. ; Usikov, A. ; Helava, H....
Scientific Reports. 7 (2017) 1 - p. , 2017

Link: https://doi.org/10.1038/..

6

The efficiency of GaN/AlGaN p-n heterostructures in UV spec..:

Kurin, S Yu ; Usikov, A S ; Papchenko, B P...
Journal of Physics: Conference Series. 741 (2016) - p. 012107 , 2016

Link: https://doi.org/10.1088/..

7

Photoelectrochemical corrosion of GaN-based p-n structures:

Fomichev, A D ; Kurin, S Yu ; Ermakovi, I A...
Journal of Physics: Conference Series. 741 (2016) - p. 012049 , 2016

Link: https://doi.org/10.1088/..

8

Determination of the electron-capture coefficients and the ..:

Reshchikov, M. A. ; McNamara, J. D. ; Toporkov, M....
Scientific Reports. 6 (2016) 1 - p. , 2016

Link: https://doi.org/10.1038/..

9

Optical transmission of strained GaN/sapphire structures:

Kurin, S Yu ; Puzyk, M V ; Ermakov, I A...
Journal of Physics: Conference Series. 741 (2016) - p. 012048 , 2016

Link: https://doi.org/10.1088/..

10

On the fractal nature of light-emitting structures based on..:

Petrov, V. N. ; Sidorov, V. G. ; Talnishnikh, N. A....
Semiconductors. 50 (2016) 9 - p. 1173-1179 , 2016

Link: https://doi.org/10.1134/..

11

Electrochemical etching of p–n-GaN/AlGaN photoelectrodes:

Usikov, A. S. ; Helava, H. ; Nikiforov, A....
Technical Physics Letters. 42 (2016) 5 - p. 482-485 , 2016

Link: https://doi.org/10.1134/..

12

Effect of Capping on Electrical and Optical Properties of G..:

Reshchikov, M. A. ; Usikov, A. ; Helava, H....
Journal of Electronic Materials. 45 (2015) 4 - p. 2178-2183 , 2015

Link: https://doi.org/10.1007/..

13

Nanomaterial disordering in AlGaN/GaN UV LED structures:

Shabunina, E I ; Levinshtein, M E ; Kulagina, M M...
Journal of Physics: Conference Series. 643 (2015) - p. 012128 , 2015

Link: https://doi.org/10.1088/..

14

Application of GaN for photoelectrolysis of water:

Puzyk, M V ; Usikov, A S ; Kurin, S Yu...
Journal of Physics: Conference Series. 643 (2015) - p. 012127 , 2015

Link: https://doi.org/10.1088/..

15

Laser cutting of GaN/Al2O3structures:

Medvedev, O S ; Khait, O ; Kurin, S Yu...
Journal of Physics: Conference Series. 643 (2015) - p. 012129 , 2015

Link: https://doi.org/10.1088/..