E-LIB Suche - Ergebnisse für: Hild, K.

1

Effect of bismuth incorporation on recombination mechanisms..:

Batool, Z. ; Hild, K. ; Marko, I....
Journal of Materials Science: Materials in Electronics. 34 (2023) 6 - p. , 2023

Link: https://doi.org/10.1007/..

2

MOVPE growth and characterization of quaternary Ga(PAsBi)/G..:

Nattermann, L. ; Ludewig, P. ; Knaub, N....
Applied Materials Today. 5 (2016) - p. 209-214 , 2016

Link: https://doi.org/10.1016/..

3

Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavi..:

Ikyo, A. B. ; Marko, I. P. ; Hild, K....
Scientific Reports. 6 (2016) 1 - p. , 2016

Link: https://doi.org/10.1038/..

4

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near..:

Marko, I P ; Jin, S R ; Hild, K...
Semiconductor Science and Technology. 30 (2015) 9 - p. 094008 , 2015

Link: https://doi.org/10.1088/..

5

Characterization of 2.3 μm GaInAsSb-based vertical-cavity s..:

Chai, G. M. T. ; Hosea, T. J. C. ; Fox, N. E....
Journal of Applied Physics. 115 (2014) 1 - p. , 2014

Link: https://doi.org/10.1063/..

6

Electrically injected GaAsBi Quantum Well Lasers:

, In: 2014 International Semiconductor Laser Conference,

Sweeney, S.J. ; Marko, I.P. ; Jin, S.R.... - p. 80-81 , 2014

Link: https://doi.org/10.1109/..

7

Growth and characterisation of Ga(NAsBi) alloy by metal–org..:

Bushell, Z.L. ; Ludewig, P. ; Knaub, N....
Journal of Crystal Growth. 396 (2014) - p. 79-84 , 2014

Link: https://doi.org/10.1016/..

8

Physical properties and optimization of GaBiAs/(Al)GaAs bas..:

Marko, I P ; Ludewig, P ; Bushell, Z L...
Journal of Physics D: Applied Physics. 47 (2014) 34 - p. 345103 , 2014

Link: https://doi.org/10.1088/..

9

Electrical injection Ga(AsBi)/(AlGa)As single quantum well ..:

Ludewig, P. ; Knaub, N. ; Hossain, N....
Applied Physics Letters. 102 (2013) 24 - p. , 2013

Link: https://doi.org/10.1063/..

10

The influence of growth conditions on carrier recombination..:

Hossain, N. ; Hild, K. ; Jin, S. R....
Applied Physics Letters. 102 (2013) 4 - p. , 2013

Link: https://doi.org/10.1063/..

11

Cavity mode gain alignment in GaAsSb-based near-infrared ve..:

Blume, G. ; Hild, K. ; Marko, I. P....
Journal of Applied Physics. 112 (2012) 3 - p. , 2012

Link: https://doi.org/10.1063/..

12

The electronic band structure of GaBiAs/GaAs layers: Influe..:

Batool, Z. ; Hild, K. ; Hosea, T. J. C....
Journal of Applied Physics. 111 (2012) 11 - p. , 2012

Link: https://doi.org/10.1063/..

13

Temperature and Bi-concentration dependence of the bandgap ..:

Marko, I. P. ; Batool, Z. ; Hild, K....
Applied Physics Letters. 101 (2012) 22 - p. , 2012

Link: https://doi.org/10.1063/..

14

Dominance of the first excitation step for magnetic circula..:

Hild, K. ; Schönhense, G. ; Elmers, H. J....
Physical Review B. 85 (2012) 1 - p. , 2012

Link: https://doi.org/10.1103/..

15

Recombination mechanisms and band alignment of GaAs1−xBix/G..:

Hossain, N. ; Marko, I. P. ; Jin, S. R....
Applied Physics Letters. 100 (2012) 5 - p. 051105 , 2012

Link: https://doi.org/10.1063/..