E-LIB Suche - Ergebnisse für: Hobart, Karl D.

1

Experimental Validation of Robust Hybrid Edge Termination S..:

Lundh, James Spencer ; Jacobs, Alan G. ; Pandey, Prakash...
IEEE Electron Device Letters. 45 (2024) 5 - p. 873-876 , 2024

Link: https://doi.org/10.1109/..

2

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 He..:

Wan, Hsiao-Hsuan ; Li, Jian-Sian ; Chiang, Chao-Ching...
ECS Transactions. 113 (2024) 7 - p. 3-14 , 2024

Link: https://doi.org/10.1149/..

3

Nanocrystalline Diamond Lateral Overgrowth for High Thermal..:

Francis, Daniel ; Ji, Xiaoyang ; Vanjari, Sai Charan...
ECS Transactions. 113 (2024) 7 - p. 15-22 , 2024

Link: https://doi.org/10.1149/..

4

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 ..:

Lundh, James Spencer ; Pavlidis, Georges ; Sasaki, Kohei...
Applied Physics Letters. 124 (2024) 5 - p. , 2024

Link: https://doi.org/10.1063/..

5

2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Swi..:

, In: 2024 Device Research Conference (DRC),

Sadek, Mansura ; Kemmerling, Jesse T. ; Visvkarma, Ajay Kumar... - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

6

PtOx Schottky Contacts on Degenerately Doped $$\left( {\ove..:

Spencer, Joseph A. ; Jacobs, Alan G. ; Hobart, Karl D....
Journal of Electronic Materials. 53 (2024) 6 - p. 2798-2805 , 2024

Link: https://doi.org/10.1007/..

7

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heteroju..:

Masten, Hannah N. ; Lundh, James Spencer ; Feygelson, Tatyana I....
Applied Physics Letters. 124 (2024) 15 - p. , 2024

Link: https://doi.org/10.1063/..

8

Detecting defects that reduce breakdown voltage using machi..:

Gallagher, James C. ; Mastro, Michael A. ; Jacobs, Alan G....
Scientific Reports. 14 (2024) 1 - p. , 2024

Link: https://doi.org/10.1038/..

9

Hybrid Edge Termination for High-Voltage Vertical GaN Devic..:

Pandey, Prakash ; Nelson, Tolen M. ; Hontz, Michael R....
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3552-3559 , 2024

Link: https://doi.org/10.1109/..

10

Modeling Framework to Compare High Voltage Vertical GaN PN ..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),

Atwimah, Samuel K. ; Nelson, Tolen ; Pandey, Prakash... - p. 2663-2669 , 2024

Link: https://doi.org/10.1109/..

11

Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3:

Jacobs, Alan G. ; Spencer, Joseph A. ; Tadjer, Marko J....
Journal of Electronic Materials. 53 (2024) 6 - p. 2811-2816 , 2024

Link: https://doi.org/10.1007/..

12

Suppression of Enhanced Magnesium Diffusion During High‐Pre..:

Jacobs, Alan G. ; Feigelson, Boris N. ; Lundh, James S....
physica status solidi (a). , 2024

Link: https://doi.org/10.1002/..

13

Study of anode doping and avalanche in foundry compatible 1..:

Ebrish, Mona A. ; Porter, Matthew ; Jacobs, Alan...
Applied Physics Express. 16 (2023) 11 - p. 116501 , 2023

Link: https://doi.org/10.35848..

14

Experimental determination of critical thickness limitation..:

Lundh, James Spencer ; Huynh, Kenny ; Liao, Michael...
Applied Physics Letters. 123 (2023) 22 - p. , 2023

Link: https://doi.org/10.1063/..

15

Efficient Activation and High Mobility of Ion-Implanted Sil..:

Jacobs, Alan G. ; Feigelson, Boris N. ; Spencer, Joseph A....
Crystals. 13 (2023) 5 - p. 736 , 2023

Link: https://doi.org/10.3390/..