Hoex, B.
126  Ergebnisse:
Personensuche X
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3

Extracting dielectric fixed charge density on highly doped ..:

To, A. ; Hoex, B.
Journal of Applied Physics.  122 (2017)  19 - p. , 2017
 
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4

Acceleration and mitigation of carrier-induced degradation ..:

Payne, D. N. R. ; Chan, C. E. ; Hallam, B. J....
physica status solidi (RRL) - Rapid Research Letters.  10 (2016)  3 - p. 237-241 , 2016
 
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5

Geometric confinement of directly deposited features on hyd..:

Liu, L. ; Wang, X. ; Lennon, A..
Journal of Materials Science.  49 (2014)  12 - p. 4363-4370 , 2014
 
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7

On the transient amorphous silicon structures during solid ..:

Law, F. ; Hidayat, H. ; Kumar, A....
Journal of Non-Crystalline Solids.  363 (2013)  - p. 172-177 , 2013
 
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10

Excellentc-Si surface passivation by thermal atomic layer d..:

Liao, B ; Stangl, R ; Ma, F...
Journal of Physics D: Applied Physics.  46 (2013)  38 - p. 385102 , 2013
 
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11

Unexpectedly High Etching Rate of Highly Doped n-Type Cryst..:

Liu, L. ; Lin, F. ; Heinrich, M...
ECS Journal of Solid State Science and Technology.  2 (2013)  9 - p. P380-P383 , 2013
 
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13

Kinetic study of solid phase crystallisation of expanding t..:

Law, F. ; Hoex, B. ; Wang, J....
Thin Solid Films.  520 (2012)  17 - p. 5820-5825 , 2012
 
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14

Low-Temperature Surface Passivation of Moderately Doped Cry..:

Lin, F. ; Hoex, B. ; Koh, Y. H...
ECS Journal of Solid State Science and Technology.  2 (2012)  1 - p. N11-N14 , 2012
 
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