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X
Hopstaken, M.
~ 200  Ergebnisse:
Personensuche X
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1

New Phase-Change Materials by Atomic-Level Engineering the ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Cheng, H. Y. ; Grun, A. ; Chien, W C.... - p. 18.5.1-18.5.4 , 2022
Link: https://doi.org/10.1109/..
 
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2

Si Incorporation Into AsSeGe Chalcogenides for High Thermal..:

, In: 2020 IEEE Symposium on VLSI Technology,
Cheng, H. Y. ; Kuo, I. T. ; Chien, W C.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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3

(Invited) Low-Temperature Growth of Strained Germanium Quan..:

Bedell, Stephen W. ; Hart, Sean ; Bangsaruntip, Sarunya...
ECS Transactions.  98 (2020)  5 - p. 215-224 , 2020
Link: https://doi.org/10.1149/..
 
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4

Annealing and Impurity Effects in Co Thin Films for MOL Con..:

Kelly, J. ; Kamineni, V. ; Lin, X....
Journal of The Electrochemical Society.  166 (2018)  1 - p. D3100-D3109 , 2018
Link: https://doi.org/10.1149/..
 
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5

Tin Incorporated in Copper Films during Damascene Copper El..:

Kitayaporn, S. ; Huang, Q. ; Hopstaken, M..
Journal of The Electrochemical Society.  162 (2014)  1 - p. D74-D81 , 2014
Link: https://doi.org/10.1149/..
 
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6

Characterization of 3D Dopant Distribution in State of the ..:

Hatzistergos, M.S. ; Hopstaken, M. ; Kim, E...
Microscopy and Microanalysis.  19 (2013)  S2 - p. 960-961 , 2013
Link: https://doi.org/10.1017/..
 
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7

Enhanced Grain Growth of Electroplated Copper on Cobalt-Con..:

Huang, Q. ; Baker-O'Neal, B. C. ; Cabral Jr., C....
Journal of The Electrochemical Society.  160 (2013)  12 - p. D3045-D3050 , 2013
Link: https://doi.org/10.1149/..
 
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8

CMOS compatible self-aligned S/D regions for implant-free I..:

Czornomaz, L. ; El Kazzi, M. ; Hopstaken, M....
Solid-State Electronics.  74 (2012)  - p. 71-76 , 2012
Link: https://doi.org/10.1016/..
 
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9

Leveler Effect and Oscillatory Behavior during Copper Elect..:

Huang, Q. ; Baker-O'Neal, B. C. ; Parks, C....
Journal of The Electrochemical Society.  159 (2012)  9 - p. D526-D531 , 2012
Link: https://doi.org/10.1149/..
 
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10

High temperature (1000 °C) compatible Y–La–Si–O silicate ga..:

Dubourdieu, C. ; Cartier, E. ; Bruley, J....
Applied Physics Letters.  98 (2011)  25 - p. , 2011
Link: https://doi.org/10.1063/..
 
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11

Low-Temperature Epitaxy of Compressively Strained Silicon D..:

Shahrjerdi, D. ; Hekmatshoar, B. ; Bedell, S. W...
Journal of Electronic Materials.  41 (2011)  3 - p. 494-497 , 2011
Link: https://doi.org/10.1007/..
 
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12

MOCVD fluorine free WSix metal gate electrode on high-k die..:

Gassilloud, R. ; Martin, F. ; Leroux, C....
Microelectronic Engineering.  86 (2009)  3 - p. 263-267 , 2009
Link: https://doi.org/10.1016/..
 
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13

Oxygen passivation of vacancy defects in metal-nitride gate..:

Cartier, E. ; Hopstaken, M. ; Copel, M.
Applied Physics Letters.  95 (2009)  4 - p. , 2009
Link: https://doi.org/10.1063/..
 
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14

Low-thermal surface preparation, HCl etch and Si/SiGe selec..:

Destefanis, V ; Hartmann, J M ; Hopstaken, M..
Semiconductor Science and Technology.  23 (2008)  10 - p. 105018 , 2008
Link: https://doi.org/10.1088/..
 
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15

Integration and characterization of gas cluster processing ..:

Gras, R. ; Gosset, L.G. ; Petitprez, E....
Microelectronic Engineering.  84 (2007)  11 - p. 2675-2680 , 2007
Link: https://doi.org/10.1016/..
 
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