Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Horiguchi, N.
348  Ergebnisse:
Personensuche X
?
1

Side and Corner Region Non-Uniformities in Grown SiO2 and T..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Bastos, J. P. ; O'Sullivan, B. J. ; Higashi, Y.... - p. P36.PI-1-P36.PI-7 , 2024
Link: https://doi.org/10.1109/..
 
?
2

Forksheet Field-Effect Transistors for Area Scaling and Gat..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Mertens, H. ; Horiguchi, N. - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
?
3

CMOS Scaling by Nanosheet Device Architectures and Backside..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Horiguchi, N. ; Mertens, H. ; Ritzenthaler, R.... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
?
4

Towards Improved Nanosheet-Based Complementary Field Effect..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Chiarella, T. ; Matagne, P. ; Mertens, H.... - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
?
5

Characterization and Advanced Modeling of Dielectric Defect..:

Asanovski, R. ; Arimura, H. ; de Marneffe, J.-F....
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1745-1751 , 2024
Link: https://doi.org/10.1109/..
 
?
6

Compact thermally stable high voltage FinFET with 40 nm tox..:

Spessot, A. ; Matagne, P. ; Arimura, H....
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 03SP12 , 2024
Link: https://doi.org/10.35848..
 
?
7

Characterization of DC performance and low-frequency noise ..:

Asanovski, R. ; Grill, A. ; Franco, J....
Solid-State Electronics.  215 (2024)  - p. 108881 , 2024
Link: https://doi.org/10.1016/..
 
?
8

Impact of work function metal stacks on the performance and..:

Franco, J. ; Arimura, H. ; Brus, S....
Solid-State Electronics.  216 (2024)  - p. 108929 , 2024
Link: https://doi.org/10.1016/..
 
?
9

Nanosheet-based Device Architectures with Front/Backside Co..:

, In: 2023 21st International Workshop on Junction Technology (IWJT),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 1-5 , 2023
Link: https://doi.org/10.23919..
 
?
10

Impact of Backside Power Delivery Network with Buried Power..:

, In: 2023 45th Annual EOS/ESD Symposium (EOS/ESD),
Serbulova, K. ; Chen, S.-H. ; Hellings, G.... - p. 1-6 , 2023
Link: https://doi.org/10.23919..
 
?
11

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
?
12

Ultimate Layer Stacking Technology for High Density Sequent..:

, In: 2023 International Electron Devices Meeting (IEDM),
Radu, I. ; Nguyen, B-Y. ; Chang, C-H.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
13

3D Stacked Devices and MOL Innovations for Post-Nanosheet C..:

, In: 2023 International Electron Devices Meeting (IEDM),
Horiguchi, N. ; Mertens, H. ; Chiarella, T.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
14

Backside Power Delivery: Game Changer and Key Enabler of Ad..:

, In: 2023 International Electron Devices Meeting (IEDM),
Veloso, A. ; Vermeersch, B. ; Chen, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
15

Molybdenum Nitride as a Scalable and Thermally Stable pWFM ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Arimura, H. ; Brus, S. ; Franco, J.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
1-15