E-LIB Suche - Ergebnisse für: Hoshino, Norihiro

1

Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h ..:

Okamoto, Takeshi ; Uehigashi, Hideyuki ; Kanda, Takahiro...
Solid State Phenomena. 342 (2023) - p. 105-112 , 2023

Link: https://doi.org/10.4028/..

2

Investigation of propagation and coalescence of threading s..:

Kamata, Isaho ; Hoshino, Norihiro ; Betsuyaku, Kiyoshi..
Journal of Crystal Growth. 590 (2022) - p. 126676 , 2022

Link: https://doi.org/10.1016/..

3

Carrier dynamics of silicon vacancies of SiC under simultan..:

Yamazaki, Yuichi ; Chiba, Yoji ; Sato, Shin-ichiro...
Applied Physics Letters. 118 (2021) 2 - p. , 2021

Link: https://doi.org/10.1063/..

4

Reduction in dislocation densities in 4H-SiC bulk crystal g..:

Hoshino, Norihiro ; Kamata, Isaho ; Kanda, Takahiro...
Applied Physics Express. 13 (2020) 9 - p. 095502 , 2020

Link: https://doi.org/10.35848..

5

Optically Detected Magnetic Resonance Study of 3D Arrayed S..:

Yamazaki, Yuichi ; Chiba, Yoji ; Sato, Shin Ichiro...
Materials Science Forum. 1004 (2020) - p. 343-348 , 2020

Link: https://doi.org/10.4028/..

6

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Meth..:

Tokuda, Yuichiro ; Hoshino, Norihiro ; Kuno, Hironari...
Materials Science Forum. 1004 (2020) - p. 5-13 , 2020

Link: https://doi.org/10.4028/..

7

Development of 150-mm 4H-SiC Substrates Using a High-Temper..:

Okamoto, Takeshi ; Kanda, Takahiro ; Tokuda, Yuichiro...
Materials Science Forum. 1004 (2020) - p. 14-19 , 2020

Link: https://doi.org/10.4028/..

8

Glide of C-core partial dislocations along edges of expandi..:

Tokuda, Yuichiro ; Kamata, Isaho ; Hoshino, Norihiro.
Japanese Journal of Applied Physics. 58 (2019) 12 - p. 121005 , 2019

Link: https://doi.org/10.7567/..

9

X-Ray Topography Analysis of 4H-SiC Crystals Grown by the H..:

Kamata, Isaho ; Hoshino, Norihiro ; Tokuda, Yuichiro...
Materials Science Forum. 924 (2018) - p. 180-183 , 2018

Link: https://doi.org/10.4028/..

10

Immobilization Phenomenon of Partials Surrounding Double Sh..:

Sugiyama, Naohiro ; Suo, Hiromasa ; Eto, Kazuma...
Materials Science Forum. 924 (2018) - p. 160-163 , 2018

Link: https://doi.org/10.4028/..

11

Fast growth of n-type 4H-SiC bulk crystal by gas-source met..:

Hoshino, Norihiro ; Kamata, Isaho ; Tokuda, Yuichiro...
Journal of Crystal Growth. 478 (2017) - p. 9-16 , 2017

Link: https://doi.org/10.1016/..

12

Epitaxial Layer Thickness Dependence on Heavy Ion Induced C..:

Makino, Takahiro ; Onoda, Shinobu ; Hoshino, Norihiro..
Materials Science Forum. 858 (2016) - p. 753-756 , 2016

Link: https://doi.org/10.4028/..

13

Limitations in Very Fast Growth of 4H-SiC Crystals by High-..:

Hoshino, Norihiro ; Kamata, Isaho ; Tokuda, Yuichiro...
Materials Science Forum. 858 (2016) - p. 29-32 , 2016

Link: https://doi.org/10.4028/..

14

Developing Technologies of SiC Gas Source Growth Method:

Kojima, Jun ; Tokuda, Yuichiro ; Makino, Emi...
Materials Science Forum. 858 (2016) - p. 23-28 , 2016

Link: https://doi.org/10.4028/..

15

Doping Fluctuation and Defect Formation in Fast 4H-SiC Crys..:

Kamata, Isaho ; Hoshino, Norihiro ; Tokuda, Yuichiro...
Materials Science Forum. 858 (2016) - p. 61-64 , 2016

Link: https://doi.org/10.4028/..