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Hottewitzsch, P.
5  Ergebnisse:
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1

Impulse measurement of doping profiles in MOS structures us..:

Beister, G. ; Schmidt, V. ; Hottewitzsch, P..
Physica Status Solidi (a).  28 (1975)  1 - p. K53-K56 , 1975
Link: https://doi.org/10.1002/..
 
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2

On the frequency dependence of the capacitance and thermall..:

Klose, H. ; Zeissig, D. ; Lindemann, G..
Physica Status Solidi (a).  28 (1975)  1 - p. K11-K15 , 1975
Link: https://doi.org/10.1002/..
 
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3

Capacitance of p–n junctions in GaP with deep centres:

Klose, H. ; Hottewitzsch, P. ; Kirstein, W..
Physica Status Solidi (a).  16 (1973)  1 - p. K39-K42 , 1973
Link: https://doi.org/10.1002/..
 
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4

Capacitance of p+−n junctions with deep centres:

Beister, G. ; Duckert, K. ; Hottewitzsch, P..
Physica Status Solidi (a).  19 (1973)  2 - p. 479-486 , 1973
Link: https://doi.org/10.1002/..
 
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5

Capacitance of p+ −n junctions with deep centres II. Experi..:

Beister, G. ; Duckert, K. ; Hottewitzsch, P..
Physica Status Solidi (a).  20 (1973)  1 - p. 119-125 , 1973
Link: https://doi.org/10.1002/..
 
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