Hou, Vincent D H
3920  Ergebnisse:
Personensuche X
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3

High-performance and low parasitic capacitance CNT MOSFET: ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Li, Shengman ; Chao, Tzu-Ang ; Gilardi, Carlo... - p. 1-4 , 2023
 
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4

3D Sectioning of Rough Interfaces Using Mixed-State Multisl..:

Karapetyan, Shake ; Chen, Ta-Kun ; Hou, Vincent D H.
Microscopy and Microanalysis.  29 (2023)  Supplement_1 - p. 288-290 , 2023
 
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5

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal ..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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6

Building high performance transistors on carbon nanotube ch..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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8

Low N-Type Contact Resistance to Carbon Nanotubes in Highly..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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10

Direct Quantitative Extraction of Internal Variables from M..:

, In: 2022 International Electron Devices Meeting (IEDM),
Passlack, Matthias ; Tasneem, Nujhat ; Wang, Zheng... - p. 32.4.1-32.4.4 , 2022
 
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12

Automatic Page-Layout Scripts for Gatan Digital Micrograph®:

Hou, Vincent D.-H.
Microscopy and Microanalysis.  7 (2001)  S2 - p. 976-977 , 2001
 
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15

Scaled contact length with low contact resistance in monola..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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