Houng, Y.
95  Ergebnisse:
Personensuche X
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2

MP-A7 microwave InxGa1-xAsyP1-y/Inp MESFET:

Morkoc, H. ; Andrews, J. ; Houng, Y....
IEEE Transactions on Electron Devices.  25 (1978)  11 - p. 1341-1341 , 1978
 
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4

MBE growth of highly reproducible VCSELs:

Houng, Y.M. ; Tan, M.R.T.
Journal of Crystal Growth.  175-176 (1997)  - p. 352-358 , 1997
 
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5

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser..:

Houng, Y.M. ; Tan, M.R.T. ; Liang, B.W....
Journal of Crystal Growth.  136 (1994)  1-4 - p. 216-220 , 1994
 
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6

Analysis of wafer fusing for 1.3 μm vertical cavity surface..:

Ram, R. J. ; Yang, L. ; Nauka, K....
Applied Physics Letters.  62 (1993)  20 - p. 2474-2476 , 1993
 
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7

Carbon incorporation in AlGaAs grown by CBE:

Lee, B.J. ; Houng, Y.M. ; Miller, J.N..
Journal of Crystal Growth.  105 (1990)  1-4 - p. 168-177 , 1990
 
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11

Growth of Semi‐Insulating LPE GaAs for FET Buffer Layers:

Houng, Y. M. ; Pearson, G. L. ; Mattes, B. L.
Journal of The Electrochemical Society.  125 (1978)  12 - p. 2058-2061 , 1978
 
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12

Deep trapping effects at the GaAs-GaAs : Cr interface in Ga..:

Houng, Y. M. ; Pearson, G. L.
Journal of Applied Physics.  49 (1978)  6 - p. 3348-3352 , 1978
 
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14

Levels of analysis: philosophical issues:

Houng, Allen Y.
WIREs Cognitive Science.  3 (2012)  3 - p. 315-325 , 2012
 
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