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Hsieh, Dong-Ru
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1

Highly Scaled BEOL-Compatible Thin Film Transistors With Ul..:

Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3671-3677 , 2024
Link: https://doi.org/10.1109/..
 
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2

Large Memory Window Antifuse HfO₂-Based One-Resistor and On..:

Hsieh, Dong-Ru ; Ni, Jia-Chian ; Yeh, Wei-Ju...
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2824-2829 , 2024
Link: https://doi.org/10.1109/..
 
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3

Record-High Memory Window and Robust Retention Anti-Fuse OT..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Hsieh, Dong-Ru ; Ni, Jia-Chian ; Yeh, Wei-Ju... - p. 113-114 , 2023
Link: https://doi.org/10.23919..
 
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4

Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Liang, Yan-Kui ; Zheng, June-Yang ; Lin, Yu-Lon... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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5

Optimization of Ferroelectricity in Al-Doped HfO2 Capacitor..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Hsieh, Dong-Ru ; Luo, Huai-En ; Ni, Jia-Chian... - p. 49-50 , 2023
Link: https://doi.org/10.23919..
 
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6

Stacked Gate-All-Around Nanosheet Channel Ferroelectric Hfx..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),
Hsieh, Dong-Ru ; Lee, Chia-Chin ; Chao, Tien-Sheng - p. 121-122 , 2023
Link: https://doi.org/10.23919..
 
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7

First Demonstration of Highly Scaled Atomic Layer Deposited..:

, In: 2023 International Electron Devices Meeting (IEDM),
Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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8

Reliability of Multiple-Layer Stacked Gate-All-Around Poly-..:

Hsieh, Dong-Ru ; Lee, Chia-Chin ; Hong, Tzu-Chieh..
IEEE Transactions on Electron Devices.  70 (2023)  7 - p. 3915-3920 , 2023
Link: https://doi.org/10.1109/..
 
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9

Highly Stable Short Channel Ultrathin Atomic Layer Deposite..:

Liang, Yan-Kui ; Li, Wei-Li ; Zheng, Jun-Yang...
IEEE Electron Device Letters.  44 (2023)  10 - p. 1644-1647 , 2023
Link: https://doi.org/10.1109/..
 
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10

Role of Nitrogen in Ferroelectricity of Hf xZr1-xO2-Based C..:

Hsieh, Dong-Ru ; Lee, Chia-Chin ; Chao, Tien-Sheng
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2074-2079 , 2022
Link: https://doi.org/10.1109/..
 
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11

Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet C..:

Lee, Chia-Chin ; Hsieh, Dong-Ru ; Li, Shou-Wei..
IEEE Transactions on Electron Devices.  69 (2022)  3 - p. 1512-1518 , 2022
Link: https://doi.org/10.1109/..
 
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12

Investigation of NH3 Plasma Nitridation on Hysteresis-Free ..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Hsieh, Dong-Ru ; Lee, Chia-Chin ; Hong, Zi-Yang. - p. 24-26 , 2022
Link: https://doi.org/10.1109/..
 
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13

High-performance sidewall damascened tri-gate poly-si TFTs ..:

Hsieh, Dong-Ru ; Kuo, Po-Yi ; Lin, Jer-Yi...
Semiconductor Science and Technology.  32 (2017)  2 - p. 025004 , 2017
Link: https://doi.org/10.1088/..
 
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14

Radiotherapy Is Associated with an Accelerated Risk of Caro..:

Lu, Cheng-Hsien ; Lai, Yun-Ru ; Fang, Fu-Min...
Cancers.  14 (2022)  5 - p. 1234 , 2022
Link: https://doi.org/10.3390/..
 
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15

Concurrent chemoradiation therapy is associated with an acc..:

Huang, Chih-Cheng ; Lai, Yun-Ru ; Chiu, Wen-Chan...
Radiotherapy and Oncology.  170 (2022)  - p. 129-135 , 2022
Link: https://doi.org/10.1016/..
 
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