E-LIB Suche - Ergebnisse für: Hsueh, Kuang-Po

1

AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Subs..:

Pu, Taofei ; Wang, Hsiang-Chun ; Hsueh, Kuang-Po..
IEEE Journal of the Electron Devices Society. 10 (2022) - p. 318-323 , 2022

Link: https://doi.org/10.1109/..

2

Effects of Thermal Annealing on the Properties of Zirconium..:

Lin, Wen-Yen ; Chien, Feng-Tsun ; Chiu, Hsien-Chin..
Membranes. 11 (2021) 5 - p. 373 , 2021

Link: https://doi.org/10.3390/..

3

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mob..:

Liu, Chia-Hao ; Chiu, Hsien-Chin ; Huang, Chong-Rong...
Crystals. 10 (2020) 1 - p. 25 , 2020

Link: https://doi.org/10.3390/..

4

The Demonstration of Recessed Anodes AlGaN/GaN Schottky Bar..:

, In: 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia),

Hsueh, Kuang-Po ; Wang, Hao-Yu ; Chiu, Hsien-Chin... - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

5

The demonstration of recessed anodes AlGaN/GaN Schottky bar..:

Hsueh, Kuang-Po ; Chiu, Hsien-Chin ; Wang, Hsiang-Chun...
Japanese Journal of Applied Physics. 58 (2019) 7 - p. 071002 , 2019

Link: https://doi.org/10.7567/..

6

A Low Impact Ionization Rate Poly-Si TFT with a Current and..:

Chien, Feng-Tso ; Hsueh, Kuang-Po ; Hong, Zhen-Jie...
Coatings. 9 (2019) 8 - p. 514 , 2019

Link: https://doi.org/10.3390/..

7

Effect of the AlGaN/GaN Schottky barrier diodes combined wi..:

Hsueh, Kuang-Po ; Chang, Yi-Sheng ; Li, Bo-Hong...
Materials Science in Semiconductor Processing. 90 (2019) - p. 107-111 , 2019

Link: https://doi.org/10.1016/..

8

AlGaN/GaN Schottky barrier diodes on silicon substrates wit..:

Chiu, Hsien-Chin ; Chen, Shang-Cyun ; Chiu, Jiun-Wei...
Microelectronics Reliability. 83 (2018) - p. 238-241 , 2018

Link: https://doi.org/10.1016/..

9

Reliability Studies on AlGaN/GaN Metal-Insulator-Semiconduc..:

Hsueh, Kuang-Po ; Wang, Hou-Yu ; Wang, Hsiang-Chun...
ECS Journal of Solid State Science and Technology. 7 (2018) 8 - p. Q142-Q147 , 2018

Link: https://doi.org/10.1149/..

10

Effect of N2O/BCl3Cyclical Recess Etching Technique Used Pr..:

Hsueh, Kuang-Po ; Wang, Hsiang-Chun ; Chen, Shang-Cyun...
ECS Journal of Solid State Science and Technology. 6 (2017) 10 - p. N177-N181 , 2017

Link: https://doi.org/10.1149/..

11

Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schott..:

Hsueh, Kuang-Po ; Cheng, Yuan-Hsiang ; Wang, Hou-Yu...
Materials Science in Semiconductor Processing. 66 (2017) - p. 69-73 , 2017

Link: https://doi.org/10.1016/..

12

Improved reverse recovery characteristics of low turn-on vo..:

Hsueh, Kuang-Po ; Peng, Li-Yi ; Cheng, Yuan-Hsiang...
Journal of Alloys and Compounds. 703 (2017) - p. 204-209 , 2017

Link: https://doi.org/10.1016/..

13

Physical properties of Al-doped MgZnO/AlGaN p–n heterojunct..:

Hsueh, Kuang-Po ; Chiu, Hsien-Chin ; Sheu, Jinn-Kong.
Optical and Quantum Electronics. 48 (2016) 11 - p. , 2016

Link: https://doi.org/10.1007/..

14

Effects of Temperature on Niobium-Doped MgZnO Films Grown U..:

Hsueh, Kuang-Po ; Huang, Chao-Yung ; Chiu, Hsien-Chin..
ECS Journal of Solid State Science and Technology. 4 (2015) 8 - p. Q96-Q100 , 2015

Link: https://doi.org/10.1149/..

15

Temperature-Dependent Current-Voltage Characteristics of Al..:

Hsueh, Kuang-Po ; Cheng, Po-Wei ; Lin, Wen-Yen...
ECS Journal of Solid State Science and Technology. 3 (2014) 4 - p. Q65-Q68 , 2014

Link: https://doi.org/10.1149/..