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Hu, Hui-Yong
~ 40000  Ergebnisse:
Personensuche X
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1

Device physics and design of FD-SOI JLFET with step-gate-ox..:

Wang, Bin ; Shi, Xin-Long ; Zhang, Yun-Feng...
Chinese Physics B.  30 (2021)  4 - p. 047401 , 2021
Link: https://doi.org/10.1088/..
 
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2

Enhancement of off-state characteristics in junctionless fi..:

Wang, Bin ; Zhang, He-Ming ; Hu, Hui-Yong.
Chinese Physics B.  27 (2018)  6 - p. 067402 , 2018
Link: https://doi.org/10.1088/..
 
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3

Influence of γ-ray total dose radiation effect on the hot c..:

Hao, Min-Ru ; Hu, Hui-Yong ; Liao, Chen-Guang...
Microelectronics Reliability.  75 (2017)  - p. 69-76 , 2017
Link: https://doi.org/10.1016/..
 
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4

Hierarchical control for parallel bidirectional power conve..:

Hu, Hui-yong ; Peng, Yong-gang ; Xia, Yang-hong...
Frontiers of Information Technology & Electronic Engineering.  18 (2017)  12 - p. 2046-2057 , 2017
Link: https://doi.org/10.1631/..
 
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5

Effects of rapid thermal annealing on crystallinity and Sn ..:

Miao, Yuan-Hao ; Hu, Hui-Yong ; Song, Jian-Jun..
Chinese Physics B.  26 (2017)  12 - p. 127306 , 2017
Link: https://doi.org/10.1088/..
 
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6

Evaluation of threading dislocation density of strained Ge ..:

Miao, Yuan-Hao ; Hu, Hui-Yong ; Li, Xin...
Chinese Physics B.  26 (2017)  12 - p. 127309 , 2017
Link: https://doi.org/10.1088/..
 
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7

Analytical threshold voltage model for strained silicon GAA..:

Kang, Hai-Yan ; Hu, Hui-Yong ; Wang, Bin
Chinese Physics B.  25 (2016)  11 - p. 118501 , 2016
Link: https://doi.org/10.1088/..
 
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8

Hole Mobility in Arbitrary Orientation/Typical Plane Uniaxi..:

Song, Jian-Jun ; Zhu, He ; Zhang, He-Ming...
Silicon.  8 (2015)  3 - p. 381-389 , 2015
Link: https://doi.org/10.1007/..
 
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9

Strain and Dimension Effects on the Threshold Voltage of Na..:

Li, Yu-Chen ; Zhang, He-Ming ; Liu, Shu-lin.
Advances in Condensed Matter Physics.  2015 (2015)  - p. 1-6 , 2015
Link: https://doi.org/10.1155/..
 
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10

Physically-based modeling for hole scattering rate in strai..:

Wang, Bin ; Hu, Hui-yong ; Zhang, He-ming..
Journal of Central South University.  22 (2015)  2 - p. 430-436 , 2015
Link: https://doi.org/10.1007/..
 
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11

Double-gate tunnel field-effect transistor: Gate threshold ..:

Li, Yu-chen ; Zhang, He-ming ; Hu, Hui-yong...
Journal of Central South University.  21 (2014)  2 - p. 587-592 , 2014
Link: https://doi.org/10.1007/..
 
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12

Effect of substrate doping on threshold voltages of buried ..:

Wang, Bin ; Zhang, He-ming ; Hu, Hui-yong...
Journal of Central South University.  21 (2014)  6 - p. 2292-2297 , 2014
Link: https://doi.org/10.1007/..
 
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13

Analytical model for quasi-static C–V characteristics of st..:

Wang, Bin ; Zhang, He-Ming ; Hu, Hui-Yong...
Solid-State Electronics.  79 (2013)  - p. 258-261 , 2013
Link: https://doi.org/10.1016/..
 
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14

High-Frequency Capacitance–Voltage Characteristics of N-Typ..:

Wang, Bin ; Zhang, He-Ming ; Hu, Hui-Yong...
Japanese Journal of Applied Physics.  52 (2013)  6R - p. 064201 , 2013
Link: https://doi.org/10.7567/..
 
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15

Two-dimensional threshold voltage model of a nanoscale sili..:

Li, Yu-Chen ; Zhang, He-Ming ; Zhang, Yu-Ming...
Chinese Physics B.  22 (2013)  3 - p. 038501 , 2013
Link: https://doi.org/10.1088/..
 
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