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Hung, Chien-Chung
17583  Ergebnisse:
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1

Design Consideration of Low Capacitance SiC JMOS for Adapti..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hsu, Fu-Jen ; Hung, Chien-Chung ; Chu, Kuo-Ting... - p. 122-125 , 2020
Link: https://doi.org/10.1109/..
 
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2

Radiation Influence Comparison between SiC JMOS and DMOS:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hsu, Fu-Jen ; Hung, Chien-Chung ; Chu, Kuo-Ting... - p. 146-149 , 2020
Link: https://doi.org/10.1109/..
 
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3

Influence of displacement damage induced by neutron irradia..:

Chao, Der-Sheng ; Shih, Hua-Yu ; Jiang, Jheng-Yi...
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBD08 , 2019
Link: https://doi.org/10.7567/..
 
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4

SiC MOSFET with Integrated Zener Diode as an Asymmetric Bid..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Yen, Cheng-Tyng ; Hsu, Fu-Jen ; Chu, Kuo-Ting... - p. 135-138 , 2019
Link: https://doi.org/10.1109/..
 
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5

Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hsu, Fu-Jen ; Yen, Cheng-Tyng ; Hung, Chien-Chung... - p. 255-258 , 2019
Link: https://doi.org/10.1109/..
 
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6

A comprehensive study on the oxidation of 4H-SiC in diluted..:

Tseng, Yuan-Hung ; Wu, Tsung-Han ; Tsui, Bing-Yue...
Japanese Journal of Applied Physics.  56 (2017)  4S - p. 04CR02 , 2017
Link: https://doi.org/10.7567/..
 
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7

Negative bias temperature instability of SiC MOSFET induced..:

Yen, Cheng-Tyng ; Hung, Chien-Chung ; Hung, Hsiang-Ting...
Applied Physics Letters.  108 (2016)  1 - p. , 2016
Link: https://doi.org/10.1063/..
 
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8

Characteristics improvement of 4H-SiC using termination wit..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Hung, Chien-Chung ; Yen, Cheng-Tyng ; Lee, Lurng-Shehng... - p. 217-220 , 2014
Link: https://doi.org/10.1109/..
 
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9

(Invited) Innovative Wide Band Gap Power Devices Achievemen..:

Lee, Chwan Ying ; Chen, Yung-Hsiang ; Lee, Lurng-Shehng...
ECS Transactions.  52 (2013)  1 - p. 11-16 , 2013
Link: https://doi.org/10.1149/..
 
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10

Diagnosis of MRAM Write Disturbance Fault:

Su, Chin-Lung ; Tsai, Chih-Wea ; Chen, Ching-Yi...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems.  18 (2010)  12 - p. 1762-1766 , 2010
Link: https://doi.org/10.1109/..
 
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11

Write Disturbance Modeling and Testing for MRAM:

Su, Chin-Lung ; Tsai, Chih-Wea ; Wu, Cheng-Wen...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems.  16 (2008)  3 - p. 277-288 , 2008
Link: https://doi.org/10.1109/..
 
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12

Reduction in critical current density for spin torque trans..:

Yen, Cheng-Tyng ; Chen, Wei-Chuan ; Wang, Ding-Yeong...
Applied Physics Letters.  93 (2008)  9 - p. , 2008
Link: https://doi.org/10.1063/..
 
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13

Improvement switching characteristics of toggle magnetic ra..:

Lee, Yuan-Jen ; Hung, Chien-Chung ; Wang, Ding-Yeong...
Applied Physics Letters.  90 (2007)  3 - p. , 2007
Link: https://doi.org/10.1063/..
 
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14

Wide operation margin of toggle mode switching for magnetic..:

Hung, Chien-Chung ; Lee, Yuan-Jen ; Kao, Ming-Jer...
Applied Physics Letters.  88 (2006)  11 - p. , 2006
Link: https://doi.org/10.1063/..
 
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15

The switching behaviors of submicron magnetic tunnel juncti..:

Wang, Yung-Hung ; Chen, Wei-Chuan ; Chen, Young-Shying...
Journal of Applied Physics.  97 (2005)  10 - p. , 2005
Link: https://doi.org/10.1063/..
 
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