Hung, Terry Y. T.
241  Ergebnisse:
Personensuche X
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1

Contact Optimization Through Annealing and Edge Functionali..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
 
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2

Barrier Booster for Remote Extension Doping and its DTCO fo..:

, In: 2023 International Electron Devices Meeting (IEDM),
Gilardi, Carlo ; Zeevi, Gilad ; Choi, Suhyeong... - p. 1-4 , 2023
 
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3

Comprehensive Study of Contact Length Scaling Down to 12 nm..:

Wu, Wen-Chia ; Hung, Terry Y. T. ; Sathaiya, D. Mahaveer...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6680-6686 , 2023
 
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4

Status and Performance of Integration Modules Toward Scaled..:

, In: 2023 International Electron Devices Meeting (IEDM),
 
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5

Scaled contact length with low contact resistance in monola..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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7

Perspective on Low-dimensional Channel Materials for Extrem..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Su, Sheng-Kai ; Chen, Edward ; Hung, Terry Y. T.... - p. 403-404 , 2022
 
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9

Comprehensive Physics Based TCAD Model for 2D MX2 Channel T..:

, In: 2022 International Electron Devices Meeting (IEDM),
Sathaiya, D. Mahaveer ; Hung, Terry Y.T. ; Chen, Edward... - p. 28.4.1-28.4.4 , 2022
 
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10

pMOSFET with CVD-grown 2D semiconductor channel enabled by ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Hung, Terry Y.T. ; Li, Meng-Zhan ; Yun, Wei Sheng... - p. 7.3.1-7.3.4 , 2022
 
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