E-LIB Suche - Ergebnisse für: Huyghebaert, T.

1

Le burn-out est-il une entité nosographique distincte ?:

Schmid, F. ; Huyghebaert, T. ; Bertrand, A....
Psychologie Française. 66 (2021) 3 - p. 241-257 , 2021

Link: https://doi.org/10.1016/..

2

Effets du soutien organisationnel perçu et des caractéristi..:

Gillet, N. ; Fouquereau, E. ; Huyghebaert, T..
Psychologie Française. 61 (2016) 2 - p. 73-81 , 2016

Link: https://doi.org/10.1016/..

3

Saturable absorption of a double layer graphene modulator o..:

, In: 2022 IEEE Photonics Conference (IPC),

Reep, T. ; Wu, C. ; Wang, Z.... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

4

Trap Density Assessment on Multilayer WS2 using Power-Depen..:

Leonhardt, A. ; Nuytten, T. ; de la Rosa, C. J. Lockhart...
ECS Journal of Solid State Science and Technology. 9 (2020) 9 - p. 093016 , 2020

Link: https://doi.org/10.1149/..

5

Complex effective index in graphene-silicon waveguides:

Sorianello, V. ; De Angelis, G. ; Cassese, T....
Optics Express. 24 (2016) 26 - p. 29984 , 2016

Link: https://doi.org/10.1364/..

6

Multilayer MoS2 growth by metal and metal oxide sulfurizati..:

Heyne, M. H. ; Chiappe, D. ; Meersschaut, J....
Journal of Materials Chemistry C. 4 (2016) 6 - p. 1295-1304 , 2016

Link: https://doi.org/10.1039/..

7

(Invited) Heterogeneous Nano- to Wide-Scale Co-Integration ..:

Thean, Aaron ; Collaert, Nadine ; Radu, Iuliana P....
ECS Transactions. 66 (2015) 4 - p. 3-14 , 2015

Link: https://doi.org/10.1149/..

8

Setting a best practice for determining the EGR rate in hyd..:

Verhelst, S. ; Vancoillie, J. ; Naganuma, K....
International Journal of Hydrogen Energy. 38 (2013) 5 - p. 2490-2503 , 2013

Link: https://doi.org/10.1016/..

9

The fate of the (reactive) primary ion: Sputtering and deso..:

Vandervorst, W. ; Janssens, T. ; Huyghebaert, C..
Applied Surface Science. 255 (2008) 4 - p. 1206-1214 , 2008

Link: https://doi.org/10.1016/..

10

Energy and angular dependence of the sputter yield and ioni..:

Huyghebaert, C. ; Conard, T. ; Vandervorst, W.
Applied Surface Science. 231-232 (2004) - p. 693-697 , 2004

Link: https://doi.org/10.1016/..

11

On the reliability of SIMS depth profiles through HfO2-stac..:

Vandervorst, W. ; Bennett, J. ; Huyghebaert, C....
Applied Surface Science. 231-232 (2004) - p. 569-573 , 2004

Link: https://doi.org/10.1016/..

12

Impact of the Ge concentration on the Ge-ionisation probabi..:

Huyghebaert, C. ; Conard, T. ; Brijs, B..
Applied Surface Science. 231-232 (2004) - p. 708-712 , 2004

Link: https://doi.org/10.1016/..

13

The influence of oxygen on the Hf signal intensity in the c..:

Huyghebaert, C. ; Conard, T. ; Vandervorst, W.
Applied Surface Science. 231-232 (2004) - p. 552-555 , 2004

Link: https://doi.org/10.1016/..

14

ToF-SIMS profiling of HfO2/Si stacks: influence of sputteri..:

Conard, T. ; Huyghebaert, C. ; Vandervorst, W.
Applied Surface Science. 231-232 (2004) - p. 574-580 , 2004

Link: https://doi.org/10.1016/..

15

Errors in near-surface and interfacial profiling of boron a..:

Vandervorst, W ; Janssens, T ; Brijs, B...
Applied Surface Science. 231-232 (2004) - p. 618-631 , 2004

Link: https://doi.org/10.1016/..