E-LIB Suche - Ergebnisse für: Hyuga, Fumiaki

1

Nondestructive evaluation of carrier concentration in the c..:

Araki, Gako ; Nittono, Takumi ; Furuta, Tomofumi.
Applied Physics Letters. 73 (1998) 3 - p. 372-374 , 1998

Link: https://doi.org/10.1063/..

2

Effect of annealing on the electrical and optical propertie..:

Watanabe, Kazuo ; Hyuga, Fumiaki ; Nittono, Takumi
Journal of Applied Physics. 84 (1998) 10 - p. 5614-5620 , 1998

Link: https://doi.org/10.1063/..

3

Electrical Characterization of InGaP/GaAs HeterointerfacesG..:

Nittono, Takumi ; Fukai, Yoshino K. ; Hyuga, Fumiaki.
Japanese Journal of Applied Physics. 37 (1998) 11A - p. L1288 , 1998

Link: https://doi.org/10.1143/..

4

Reliability study on three-dimensional interconnections for..:

Sugahara, Hirohiko ; Kimizuka, Masakatsu ; Fukai, Yoshino K...
Microelectronics Reliability. 37 (1997) 10-11 - p. 1659-1662 , 1997

Link: https://doi.org/10.1016/..

5

X-ray diffraction analysis of InGaP/GaAs heterointerfaces g..:

Nittono, Takumi ; Hyuga, Fumiaki
Journal of Applied Physics. 81 (1997) 6 - p. 2607-2610 , 1997

Link: https://doi.org/10.1063/..

6

Reduction of unintentional impurities at the interface betw..:

Nittono, Takumi ; Hyuga, Fumiaki
Journal of Crystal Growth. 170 (1997) 1-4 - p. 762-766 , 1997

Link: https://doi.org/10.1016/..

7

Characterization of In0.46Ga0.54P/n +-GaAs Heterostructures..:

Saitoh, Tadashi ; Watanabe, Kenichi ; Hyuga, Fumiaki.
Japanese Journal of Applied Physics. 35 (1996) 2S - p. 1264 , 1996

Link: https://doi.org/10.1143/..

8

Large Schottky barriers formed on epitaxial InGaP grown on ..:

Shiojima, Kenji ; Nishimura, Kazumi ; Aoki, Tatsuo.
Journal of Applied Physics. 77 (1995) 1 - p. 390-392 , 1995

Link: https://doi.org/10.1063/..

9

Photoluminescence characterization of InGaP/GaAs heterostru..:

Nittono, Takumi ; Sugitani, Suehiro ; Hyuga, Fumiaki
Journal of Applied Physics. 78 (1995) 9 - p. 5387-5390 , 1995

Link: https://doi.org/10.1063/..

10

Characterization of In0.48Ga0.52P-based thin-layer structur..:

Watanabe, Kenichi ; Kobayashi, Kenichiro ; Wong, Cheong Chee...
Thin Solid Films. 270 (1995) 1-2 - p. 97-102 , 1995

Link: https://doi.org/10.1016/..

11

Microscopically inhomogeneous GaAs/InGaP/n+InGaAs epilayer ..:

Watanabe, Kazuo ; Hyuga, Fumiaki ; Yamazaki, Hajime..
Journal of Applied Physics. 78 (1995) 10 - p. 5939-5944 , 1995

Link: https://doi.org/10.1063/..

12

Effect of an InGaP cap layer on annealing-induced conductiv..:

Watanabe, Kazuo ; Hyuga, Fumiaki ; Sugitani, Suehiro.
Journal of Applied Physics. 78 (1995) 3 - p. 1793-1797 , 1995

Link: https://doi.org/10.1063/..

13

Si-implanted InGaP/GaAs metal-semiconductor field-effect tr..:

Hyuga, Fumiaki ; Aoki, Tatsuo ; Sugitani, Suehiro..
Applied Physics Letters. 60 (1992) 16 - p. 1963-1965 , 1992

Link: https://doi.org/10.1063/..

14

Analysis of Annealing Effect on the Threshold Voltage Unifo..:

Watanabe, Kazuo ; Hyuga, Fumiaki ; Inoue, Naohisa
Journal of The Electrochemical Society. 138 (1991) 9 - p. 2815-2820 , 1991

Link: https://doi.org/10.1149/..

15

Phosphorus coimplantation effects on optimum annealing temp..:

Sugitani, Suehiro ; Hyuga, Fumiaki ; Yamasaki, Kimiyoshi
Journal of Applied Physics. 67 (1990) 1 - p. 552-554 , 1990

Link: https://doi.org/10.1063/..