E-LIB Suche - Ergebnisse für: Hyungcheol Shin

1

Extraction and modeling of physics-based gate resistance co..:

, In: Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,

Myounggon Kang ; In Man Kang ; Hyungcheol Shin - p. 4 pp. , 2006

Link: https://doi.org/10.1109/..

2

Programmable virtual source/drain MOSFETs:

, In: Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850),

Byung Yong Choi ; Yong Kyu Lee ; Woo Young Choi... - p. 229-232 , 2004

Link: https://doi.org/10.1109/..

3

Program Start Bias Grouping to Compensate for the Geometric..:

Kim, Sungju ; Ahn, Sangmin ; Park, Sechun..
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 262-267 , 2024

Link: https://doi.org/10.1109/..

4

A Compact Model for Program Operation of Gate-All-Around Ba..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Choi, Haechan ; Shin, Hyungcheol - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

5

A Compact Model-Based Threshold Voltage Distribution Simula..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Yoo, Jinil ; Shin, Hyungcheol - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

6

Temperature Dependence Modeling of Grain Boundary Barrier H..:

Kim, Juhyun ; Shin, Hyungcheol
IEEE Transactions on Electron Devices. 71 (2024) 1 - p. 524-529 , 2024

Link: https://doi.org/10.1109/..

7

Time Constant Analysis of Lateral Charge Loss in 3-D NAND F..:

Yoo, Jinil ; Jo, Hyungjun ; Shin, Hyungcheol
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4146-4152 , 2024

Link: https://doi.org/10.1109/..

8

Modeling of Threshold Voltage Shift by Neighboring Transist..:

Nguyen-Gia, Quan ; Shin, Hyungcheol
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 43 (2024) 1 - p. 324-327 , 2024

Link: https://doi.org/10.1109/..

9

Monte Carlo Simulator for Threshold Voltage Distribution of..:

Lee, Jang Kyu ; Oh, Eunseok ; Shin, Hyungcheol
IEEE Transactions on Electron Devices. 71 (2024) 1 - p. 542-546 , 2024

Link: https://doi.org/10.1109/..

10

A New Physical Model for Program Transients of Cylindrical ..:

Choi, Haechan ; Yoo, Jinil ; Shin, Hyungcheol
IEEE Transactions on Electron Devices. 71 (2024) 4 - p. 2386-2392 , 2024

Link: https://doi.org/10.1109/..

11

Investigation of Endurance Characteristics in 3-D NAND Flas..:

Jo, Hyungjun ; Kim, Jongwoo ; Cho, Yonggyu...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1852-1857 , 2024

Link: https://doi.org/10.1109/..

12

Synapse Array with Buried Bottom Gate Structure for Neuromo..:

, In: 2023 Silicon Nanoelectronics Workshop (SNW),

Jeon, Bosung ; Jang, Taejin ; Cho, Seongjae.. - p. 15-16 , 2023

Link: https://doi.org/10.23919..

13

A Novel Read Scheme Using GIDL Current to Suppress Read Dis..:

Jo, Hyungjun ; Kim, Jongwoo ; Shin, Hyungcheol
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 42 (2023) 12 - p. 5151-5155 , 2023

Link: https://doi.org/10.1109/..

14

An Innovative Program Scheme for Reducing Z-Interference in..:

Ahn, Sangmin ; Jo, Hyungjun ; Kim, Sungju...
IEEE Transactions on Electron Devices. 70 (2023) 12 - p. 6695-6698 , 2023

Link: https://doi.org/10.1109/..

15

Analysis of Vth Distribution Based on Physical Parameter Va..:

, In: 2023 International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC),

Kim, Sungju ; Shin, Hyungcheol - p. 1-5 , 2023

Link: https://doi.org/10.1109/..