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Ichihara, Reika
10  Ergebnisse:
Personensuche X
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1

Overcome the End of Life of 3D Flash Memory by Recovery Ann..:

, In: 2024 IEEE International Memory Workshop (IMW),
Tanaka, Hitomi ; Sano, Hajime ; Ichihara, Reika... - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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2

Recovery of cycling-induced degradation of interfacial SiO2..:

Schlykow, Viktoria ; Suzuki, Kunifumi ; Yoshimura, Yoko...
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP43 , 2024
Link: https://doi.org/10.35848..
 
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3

Understanding of polarization reversal and charge trapping ..:

Yoshimura, Yoko ; Suzuki, Kunifumi ; Ichihara, Reika...
Japanese Journal of Applied Physics.  63 (2024)  4 - p. 04SP02 , 2024
Link: https://doi.org/10.35848..
 
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4

Novel Operation Scheme for Suppressing Disturb in HfO2-base..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Hamai, Takamasa ; Suzuki, Kunifumi ; Ichihara, Reika... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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5

High-Endurance FeFET with Metal-Doped Interfacial Layer for..:

, In: 2023 International Electron Devices Meeting (IEDM),
Suzuki, Kunifumi ; Sakuma, Kiwamu ; Yoshimura, Yoko... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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6

Comprehensive Analysis of Hole-Trapping in SiN Films with a..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Seki, Harumi ; Ichihara, Reika ; Higashi, Yusuke... - p. 1-7 , 2023
Link: https://doi.org/10.1109/..
 
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7

High-Endurance (>1011cycles) and Thermally-Stable Sub-100nm..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Shiokawa, Taro ; Ichihara, Reika ; Hamai, Takamasa... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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8

Mechanism of HfO2-FeFET Memory Operation Revealed by Quanti..:

, In: 2022 IEEE Silicon Nanoelectronics Workshop (SNW),
Ichihara, Reika ; Higashi, Yusuke ; Suzuki, Kunifumi... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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9

Accurate Picture of Cycling Degradation in HfO2-FeFET Based..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Ichihara, Reika ; Higashi, Yusuke ; Suzuki, Kunifumi... - p. 6.3.1-6.3.4 , 2021
Link: https://doi.org/10.1109/..
 
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10

Re-examination of Vth Window and Reliability in HfO2 FeFET ..:

, In: 2020 IEEE Symposium on VLSI Technology,
Ichihara, Reika ; Suzuki, Kunifumi ; Kusai, Haruka... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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