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Ida, Jiro
58  Ergebnisse:
Personensuche X
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1

New Steep Subthreshold Slope Device "Gate-Controlled Carrie..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Yonezaki, Haruki ; Mori, Takayuki ; Ida, Jiro - p. 1-3 , 2024
Link: https://doi.org/10.1109/..
 
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2

Control of Hysteresis and Latch-Up on Steep Switching "PN-B..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Matsushita, Hiroyoshi ; Mori, Takayuki ; Ida, Jiro - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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3

Leaky-integrate-and-fire operation with signal amplificatio..:

Yonezaki, Haruki ; Mori, Takayuki ; Ida, Jiro
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP83 , 2024
Link: https://doi.org/10.35848..
 
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4

Variability Evaluation of MOS-gated PNPN Diode for Hardware..:

, In: 2023 35th International Conference on Microelectronic Test Structure (ICMTS),
Takada, Toshihiro ; Mori, Takayuki ; Ida, Jiro - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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5

Steep subthreshold slope "Dual-gate PN-body tied SOI-FET" –..:

Yonezaki, Haruki ; Mori, Takayuki ; Ida, Jiro
Solid-State Electronics.  207 (2023)  - p. 108720 , 2023
Link: https://doi.org/10.1016/..
 
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6

Sharp Turn-on Diode by Steep SS "PN-Body Tied SOI FET" for ..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Ono, Masayuki ; Ida, Jiro ; Mori, Takayuki. - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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7

Neural Network Modeling of Steep Turn-on Diodes: Validation..:

, In: 2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Nakata, Kengo ; Mori, Takayuki ; Ida, Jiro - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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8

Neuronal Function and Signal Amplification Device with Stee..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Mori, Takayuki ; Ida, Jiro - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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9

Evaluation of Multi-Finger PN-Body Tied SOI-FET-Origin and ..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Mori, Takayuki ; Nakata, Kengo ; Ida, Jiro - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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10

Neuron Function with Single Device by using "PN-Body Tied S..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Sasaki, Toru ; Mori, Takayuki ; Ida, Jiro - p. 291-293 , 2022
Link: https://doi.org/10.1109/..
 
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11

Modeling of Super Steep Subthreshold Slope Device by using ..:

, In: 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK),
Nakata, Kengo ; Mori, Takayuki ; Ida, Jiro - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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12

Investigation of capacitor-less integrate and fire neuron b..:

Mori, Takayuki ; Ida, Jiro
Japanese Journal of Applied Physics.  60 (2021)  SB - p. SBBA04 , 2021
Link: https://doi.org/10.35848..
 
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13

Transient Characteristics on Super-Steep Subthreshold Slope..:

MORI, Takayuki ; IDA, Jiro ; ENDO, Hiroki
IEICE Transactions on Electronics.  E103.C (2020)  10 - p. 533-542 , 2020
Link: https://doi.org/10.1587/..
 
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14

Analysis of Steep SS Mechanism on PN-Body Tied SOI-FET with..:

, In: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Mori, Takayuki ; Ida, Jiro ; Daimatsu, Keita - p. 96-97 , 2020
Link: https://doi.org/10.1109/..
 
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15

RF Characteristics of Rectifier Devices for Ambient RF Ener..:

, In: 2019 International Symposium on Electronics and Smart Devices (ISESD),
Ishibashi, Koichiro ; Ida, Jiro ; Nguyen, Linh-Thuy... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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