Ikeda, Keiji
502  Ergebnisse:
Personensuche X
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1

Ultra-High Endurance (>1012) and High Drive-Current Selecto..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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2

7‐2: Invited Paper: A 40 nm Gate Length Surrounding Gate Ve..:

Sato, Yuta ; Fujiwara, Hirokazu ; Saito, Nobuyoshi..
SID Symposium Digest of Technical Papers.  52 (2021)  1 - p. 61-64 , 2021
 
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5

Tungsten/In–Sn–O stacked source/drain electrode structure o..:

Kataoka, Junji ; Saito, Nobuyoshi ; Ueda, Tomomasa...
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBJ03 , 2019
 
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6

High mobility (>30 cm2 V−1 s−1) and low source/drain parasi..:

Saito, Nobuyoshi ; Sawabe, Tomoaki ; Kataoka, Junji...
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBJ07 , 2019
 
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8

Charge-Coupling Extended-Gate Amorphous-InGaZnO-Based Thin-..:

Ito, Kensuke ; Nishimura, Kotaro ; Ikeda, Keiji...
Journal of The Electrochemical Society.  165 (2018)  13 - p. B571-B575 , 2018
 
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