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Ikenaga, Kazutada
15  Ergebnisse:
Personensuche X
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1

Ion-implanted triple-zone graded junction termination exten..:

Duan, Yu ; Wang, Jingshan ; Zhu, Zhongtao...
Applied Physics Letters.  122 (2023)  21 - p. , 2023
Link: https://doi.org/10.1063/..
 
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2

High-speed growth of thick high-purity β-Ga2O3 layers by lo..:

Yoshinaga, Junya ; Tozato, Haruka ; Okuyama, Takahito...
Applied Physics Express.  16 (2023)  9 - p. 095504 , 2023
Link: https://doi.org/10.35848..
 
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3

Mass spectrometric study of β-Ga2O3 growth process by metal..:

Ikenaga, Kazutada ; Okuyama, Takahito ; Tozato, Haruka...
Japanese Journal of Applied Physics.  62 (2023)  SF - p. SF1019 , 2023
Link: https://doi.org/10.35848..
 
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4

Effect of high temperature homoepitaxial growth of β-Ga2O3 ..:

Ikenaga, Kazutada ; Tanaka, Nami ; Nishimura, Taro...
Journal of Crystal Growth.  582 (2022)  - p. 126520 , 2022
Link: https://doi.org/10.1016/..
 
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5

Three-Zone Junction Termination Extensions for Improved Per..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
Duan, Yu ; Guanxi, Piao ; Ikenaga, Kazutada... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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6

Thermodynamic and experimental studies of β-Ga2O3 growth by..:

Goto, Ken ; Ikenaga, Kazutada ; Tanaka, Nami...
Japanese Journal of Applied Physics.  60 (2021)  4 - p. 045505 , 2021
Link: https://doi.org/10.35848..
 
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7

Improving the light output power of DUV-LED by introducing ..:

Tsai, Chia-Lung ; Liu, Hsueh-Hsing ; Chen, Jun-Wei...
Solid-State Electronics.  138 (2017)  - p. 84-88 , 2017
Link: https://doi.org/10.1016/..
 
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8

Study of carbon concentration in GaN grown by metalorganic ..:

Piao, Guanxi ; Ikenaga, Kazutada ; Yano, Yoshiki...
Journal of Crystal Growth.  456 (2016)  - p. 137-139 , 2016
Link: https://doi.org/10.1016/..
 
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9

Growth of silicon-doped Al0.6Ga0.4N with low carbon concent..:

Ikenaga, Kazutada ; Mishima, Akira ; Yano, Yoshiki..
Japanese Journal of Applied Physics.  55 (2016)  5S - p. 05FE04 , 2016
Link: https://doi.org/10.7567/..
 
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10

Performance of InGaN/GaN light-emitting diodes grown using ..:

Okada, Narihito ; Tadatomo, Kazuyuki ; Yamane, Keisuke...
Japanese Journal of Applied Physics.  53 (2014)  8 - p. 081001 , 2014
Link: https://doi.org/10.7567/..
 
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11

Criteria for versatile GaN MOVPE tool: high growth rate GaN..:

Matsumoto, Koh ; Ikenaga, Kazutada ; Yamamoto, Jun...
Journal of Semiconductors.  32 (2011)  1 - p. 013003 , 2011
Link: https://doi.org/10.1088/..
 
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12

Evaluation of Performance of InGaN/GaN Light-Emitting Diode..:

Okada, Narihito ; Ishida, Fumio ; Mitsui, Yasutomo...
Japanese Journal of Applied Physics.  48 (2009)  6R - p. 062102 , 2009
Link: https://doi.org/10.1143/..
 
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13

Ethylene polymerization over zirconocenes supported on alum..:

Ikenaga, Kazutada ; Chen, Shuzuan ; Ohshima, Masa-aki..
Catalysis Communications.  8 (2007)  1 - p. 36-38 , 2007
Link: https://doi.org/10.1016/..
 
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14

Ex situ dry cleaning of reactor component of nitride metal ..:

Fukuda, Yasushi ; Orita, Takashi ; Akutsu, Nakao...
Journal of Crystal Growth.  298 (2007)  - p. 433-436 , 2007
Link: https://doi.org/10.1016/..
 
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15

GaN growth on 150-mm-diameter (111) Si substrates:

Ubukata, Akinori ; Ikenaga, Kazutada ; Akutsu, Nakao...
Journal of Crystal Growth.  298 (2007)  - p. 198-201 , 2007
Link: https://doi.org/10.1016/..
 
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