E-LIB Suche - Ergebnisse für: Illarionov, Yu. Yu.

1

Variability and high temperature reliability of graphene fi..:

Illarionov, Yu. Yu. ; Knobloch, T. ; Uzlu, B....
npj 2D Materials and Applications. 8 (2024) 1 - p. , 2024

Link: https://doi.org/10.1038/..

2

Process implications on the stability and reliability of 30..:

Illarionov, Yu. Yu. ; Karl, A. ; Smets, Q....
npj 2D Materials and Applications. 8 (2024) 1 - p. , 2024

Link: https://doi.org/10.1038/..

3

Calcium Fluoride Films with 2–10 nm Thickness on Silicon-(1..:

Banshchikov, A. G. ; Vexler, M. I. ; Ivanov, I. A....
Semiconductors. 57 (2023) 4 - p. 211-215 , 2023

Link: https://doi.org/10.1134/..

4

Effect of fluoride layer thickness on the leakage current i..:

Banshchikov, A.G. ; Dvortsova, P.A. ; Illarionov, Yu.Yu....
Thin Solid Films. 783 (2023) - p. 140058 , 2023

Link: https://doi.org/10.1016/..

5

Crystalline Calcium Fluoride: A Record-Thin Insulator for N..:

, In: 2020 Device Research Conference (DRC),

Illarionov, Yu. Yu. ; Banshchikov, A. G. ; Knobloch, T.... - p. 1-2 , 2020

Link: https://doi.org/10.1109/..

6

Reliability of 2D Field-Effect Transistors: from First Prot..:

, In: 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA),

Illarionov, Yu. Yu. ; Grasser, T. - p. 1-6 , 2019

Link: https://doi.org/10.1109/..

7

Trends in Reverse-Current Change in Tunnel MIS Diodes with ..:

Banshchikov, A. G. ; Illarionov, Yu. Yu. ; Vexler, M. I...
Semiconductors. 53 (2019) 6 - p. 833-837 , 2019

Link: https://doi.org/10.1134/..

8

Nonmonotonic Change in the Tunnel Conductivity of an MIS St..:

Illarionov, Yu. Yu. ; Banshchikov, A. G. ; Sokolov, N. S...
Technical Physics Letters. 44 (2018) 12 - p. 1188-1191 , 2018

Link: https://doi.org/10.1134/..

9

Highly-stable black phosphorus field-effect transistors wit..:

Illarionov, Yu. Yu. ; Waltl, M. ; Rzepa, G....
npj 2D Materials and Applications. 1 (2017) 1 - p. , 2017

Link: https://doi.org/10.1038/..

10

Development of SHS azide technology of silicon carbide nano..:

Titova, Y V ; Illarionov, A Yu ; Amosov, A P..
IOP Conference Series: Materials Science and Engineering. 177 (2017) - p. 012115 , 2017

Link: https://doi.org/10.1088/..

11

Quantum-well charge and voltage distribution in a metal–ins..:

Vexler, M. I. ; Illarionov, Yu. Yu. ; Grekhov, I. V.
Semiconductors. 51 (2017) 4 - p. 444-448 , 2017

Link: https://doi.org/10.1134/..

12

Investigation of possibility to fabricate Si3N4-TiN ceramic..:

Kondratieva, L A ; Kerson, I A ; Illarionov, A Yu..
IOP Conference Series: Materials Science and Engineering. 156 (2016) - p. 012032 , 2016

Link: https://doi.org/10.1088/..

13

Resonant electron tunneling and related charging phenomena ..:

Vexler, M. I. ; Kareva, G. G. ; Illarionov, Yu. Yu..
Technical Physics Letters. 42 (2016) 11 - p. 1090-1093 , 2016

Link: https://doi.org/10.1134/..

14

Adaptation of the model of tunneling in a metal/CaF2/Si(111..:

Vexler, M. I. ; Illarionov, Yu. Yu. ; Tyaginov, S. E..
Semiconductors. 49 (2015) 2 - p. 259-263 , 2015

Link: https://doi.org/10.1134/..

15

Extraction of roughness parameters at nanometer scale by Mo..:

Ciappa, M. ; Ilgünsatiroglu, E. ; Illarionov, A.Yu.
Solid-State Electronics. 113 (2015) - p. 73-78 , 2015

Link: https://doi.org/10.1016/..