E-LIB Suche - Ergebnisse für: Ioannou-Sougleridis, V.

1

Silicon nitride resistance switching MIS cells doped with s..:

Mavropoulis, A. ; Vasileiadis, N. ; Bonafos, C....
Solid-State Electronics. 213 (2024) - p. 108851 , 2024

Link: https://doi.org/10.1016/..

2

Synaptic MIS Silicon Nitride Resistance Switching Memory Ce..:

, In: 2023 IEEE 23rd International Conference on Nanotechnology (NANO),

Mavropoulis, A.E. ; Vasileiadis, N. ; Normand, P.... - p. 596-599 , 2023

Link: https://doi.org/10.1109/..

3

Post-metallization annealing and photolithography effects i..:

Ioannou-Sougleridis, V. ; Alafakis, S. ; Pécz, B....
ECS Journal of Solid State Science and Technology. 11 (2022) 4 - p. 045006 , 2022

Link: https://doi.org/10.1149/..

4

Substrate damage in ion-implanted (100) germanium after ext..:

Skarlatos, D. ; Velessiotis, D. ; Skoulikidou, M.C....
Materials Science in Semiconductor Processing. 122 (2021) - p. 105477 , 2021

Link: https://doi.org/10.1016/..

5

Phosphorous Diffusion in N2+-Implanted Germanium during Fla..:

Skarlatos, D. ; Ioannou-Sougleridis, V. ; Barozzi, M....
ECS Journal of Solid State Science and Technology. 6 (2017) 7 - p. P418-P428 , 2017

Link: https://doi.org/10.1149/..

6

Selective-area growth of GaN nanowires on SiO2-masked Si (1..:

Kruse, J. E. ; Lymperakis, L. ; Eftychis, S....
Journal of Applied Physics. 119 (2016) 22 - p. , 2016

Link: https://doi.org/10.1063/..

7

Interface properties of Al–Al2O3–Ge MIS capacitors and the ..:

Ioannou-Sougleridis, V. ; Karageorgiou, A. ; Barlas, M...
Microelectronic Engineering. 159 (2016) - p. 84-89 , 2016

Link: https://doi.org/10.1016/..

8

Charge retention analysis of Si implanted and wet oxidized ..:

Bolomyti, E. ; Glezos, N. ; Dimitrakis, P....
Microelectronic Engineering. 159 (2016) - p. 75-79 , 2016

Link: https://doi.org/10.1016/..

9

Nitrogen induced modifications of MANOS memory properties:

Nikolaou, N. ; Ioannou-Sougleridis, V. ; Dimitrakis, P....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365 (2015) - p. 61-65 , 2015

Link: https://doi.org/10.1016/..

10

Strong Diffusion Suppression of Low Energy-Implanted Phosph..:

Thomidis, C. ; Barozzi, M. ; Bersani, M....
ECS Solid State Letters. 4 (2015) 6 - p. P47-P50 , 2015

Link: https://doi.org/10.1149/..

11

Temperature dependent retention characteristics of ion-beam..:

Simatos, D.P. ; Dimitrakis, P. ; Normand, P....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365 (2015) - p. 66-69 , 2015

Link: https://doi.org/10.1016/..

12

Quantum dots for memory applications:

Dimitrakis, P. ; Normand, P. ; Ioannou-Sougleridis, V....
physica status solidi (a). 210 (2013) 8 - p. 1490-1504 , 2013

Link: https://doi.org/10.1002/..

13

Nitrogen Implantation and Diffusion in Crystalline Germaniu..:

Skarlatos, D. ; Bersani, M. ; Barozzi, M....
ECS Journal of Solid State Science and Technology. 1 (2012) 6 - p. P315-P319 , 2012

Link: https://doi.org/10.1149/..

14

Si and Ge nanocrystals for future memory devices:

Bonafos, C. ; Carrada, M. ; Benassayag, G....
Materials Science in Semiconductor Processing. 15 (2012) 6 - p. 615-626 , 2012

Link: https://doi.org/10.1016/..

15

Interfacial Properties of ALD-Deposited Al2O3/p-Type German..:

Botzakaki, M. ; Kerasidou, A. ; Sygellou, L....
ECS Solid State Letters. 1 (2012) 2 - p. P32-P34 , 2012

Link: https://doi.org/10.1149/..