E-LIB Suche - Ergebnisse für: Ishihara, Seiya

1

Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulf..:

Matsuura, Kentaro ; Ohashi, Takumi ; Muneta, Iriya...
Journal of Electronic Materials. 47 (2018) 7 - p. 3497-3501 , 2018

Link: https://doi.org/10.1007/..

2

Investigation on Mo1−x W x S2 fabricated by co-sputtering a..:

Hibino, Yusuke ; Ishihara, Seiya ; Sawamoto, Naomi...
Japanese Journal of Applied Physics. 57 (2018) 6S1 - p. 06HB04 , 2018

Link: https://doi.org/10.7567/..

3

Suppression of Sulfur Desorption of High-Temperature Sputte..:

Hibino, Yusuke ; Ishihara, Seiya ; Oyanagi, Yuya...
ECS Transactions. 85 (2018) 13 - p. 531-539 , 2018

Link: https://doi.org/10.1149/..

4

Sputter-Deposited-MoS2${n}$ MISFETs With Top-Gate and Al2O3..:

Matsuura, Kentaro ; Wakabayashi, Hitoshi ; Shimizu, Jun'Ichi...
IEEE Journal of the Electron Devices Society. 6 (2018) - p. 1246-1252 , 2018

Link: https://doi.org/10.1109/..

5

Quantitative relationship between sputter-deposited-MoS2 pr..:

Ohashi, Takumi ; Muneta, Iriya ; Matsuura, Kentaro...
Applied Physics Express. 10 (2017) 4 - p. 041202 , 2017

Link: https://doi.org/10.7567/..

6

Local anisotropic strain evaluation in thin Ge epitaxial fi..:

Takeuchi, Kazuma ; Yokogawa, Ryo ; Ishihara, Seiya...
Japanese Journal of Applied Physics. 56 (2017) 11 - p. 110313 , 2017

Link: https://doi.org/10.7567/..

7

Band gap-tuned MoS2(1−x)Te2x thin films synthesized by a hy..:

Hibino, Yusuke ; Ishihara, Seiya ; Sawamoto, Naomi...
Journal of Materials Research. 32 (2017) 16 - p. 3021-3028 , 2017

Link: https://doi.org/10.1557/..

8

Pattern-dependent anisotropic stress evaluation in SiGe epi..:

Yamamoto, Shotaro ; Kosemura, Daisuke ; Takeuchi, Kazuma...
Japanese Journal of Applied Physics. 56 (2017) 5 - p. 051301 , 2017

Link: https://doi.org/10.7567/..

9

Properties of single-layer MoS2 film fabricated by combinat..:

Ishihara, Seiya ; Hibino, Yusuke ; Sawamoto, Naomi...
Japanese Journal of Applied Physics. 55 (2016) 6S1 - p. 06GF01 , 2016

Link: https://doi.org/10.7567/..

10

Large Scale Uniformity of Sputtering Deposited Single- and ..:

Ishihara, Seiya ; Hibino, Yusuke ; Sawamoto, Naomi...
ECS Journal of Solid State Science and Technology. 5 (2016) 11 - p. Q3012-Q3015 , 2016

Link: https://doi.org/10.1149/..

11

Improving crystalline quality of sputtering-deposited MoS2 ..:

Ishihara, Seiya ; Hibino, Yusuke ; Sawamoto, Naomi...
Japanese Journal of Applied Physics. 55 (2016) 4S - p. 04EJ07 , 2016

Link: https://doi.org/10.7567/..

12

Growth of Ge Homoepitaxial Films by Metal-Organic Chemical ..:

Suda, Kohei ; Kijima, Takahiro ; Ishihara, Seiya...
ECS Journal of Solid State Science and Technology. 4 (2015) 5 - p. P152-P154 , 2015

Link: https://doi.org/10.1149/..

13

Multi-layered MoS2 film formed by high-temperature sputteri..:

Ohashi, Takumi ; Suda, Kohei ; Ishihara, Seiya...
Japanese Journal of Applied Physics. 54 (2015) 4S - p. 04DN08 , 2015

Link: https://doi.org/10.7567/..

14

Ge homoepitaxial growth by metal–organic chemical vapor dep..:

Suda, Kohei ; Ishihara, Seiya ; Sawamoto, Naomi...
Japanese Journal of Applied Physics. 53 (2014) 11 - p. 110301 , 2014

Link: https://doi.org/10.7567/..

15

Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD:

Suda, Kohei ; Ishihara, Seiya ; Sawamoto, Naomi...
ECS Transactions. 64 (2014) 6 - p. 697-701 , 2014

Link: https://doi.org/10.1149/..