E-LIB Suche - Ergebnisse für: Izpura, I.

1

III-Nitride-based junction devices round contacts: effect o..:

Pozos, Heberto Gómez ; Maldonado, Arturo ; Izpura, J. I..
Journal of Materials Science: Materials in Electronics. 30 (2019) 12 - p. 11164-11170 , 2019

Link: https://doi.org/10.1007/..

2

Electrical detection of the mechanical resonances in AlN-ac..:

González-Castilla, S. ; Olivares, J. ; Clement, M....
Applied Physics Letters. 92 (2008) 18 - p. , 2008

Link: https://doi.org/10.1063/..

3

1/f electrical noise due to space charge regions:

Izpura, J.I.
Journal of the European Ceramic Society. 27 (2007) 13-15 - p. 4011-4015 , 2007

Link: https://doi.org/10.1016/..

4

Simulation of surface state effects in the transient respon..:

Tirado, J M ; Sanchez-Rojas, J L ; Izpura, J I
Semiconductor Science and Technology. 21 (2006) 8 - p. 1150-1159 , 2006

Link: https://doi.org/10.1088/..

5

2D simulation of static surface states in AlGaN/GaN HEMT an..:

Tirado, J M ; Sanchez-Rojas, J L ; Izpura, J I
Semiconductor Science and Technology. 20 (2005) 8 - p. 864-869 , 2005

Link: https://doi.org/10.1088/..

6

Confirmation of the pyroelectric coefficient of strained In..:

Sánchez, J. J. ; Izpura, J. I. ; Tijero, J. M. G....
Journal of Applied Physics. 91 (2002) 5 - p. 3002-3006 , 2002

Link: https://doi.org/10.1063/..

7

Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (..:

Gutiérrez, M. ; Herrera, M. ; González, D....
Microelectronics Journal. 33 (2002) 7 - p. 553-557 , 2002

Link: https://doi.org/10.1016/..

8

Observation of the pyroelectric effect in strained piezoele..:

Cho, S. ; Majerfeld, A. ; Sánchez, J.J....
Microelectronics Journal. 33 (2002) 7 - p. 531-534 , 2002

Link: https://doi.org/10.1016/..

9

Spontaneous emission study of (111) InGaAs/GaAs quantum wel..:

Ulloa, J.M. ; Borruel, L. ; Tijero, J.M.G....
Microelectronics Journal. 33 (2002) 7 - p. 589-593 , 2002

Link: https://doi.org/10.1016/..

10

Drain current collapse in GaN metal semiconductor field-eff..:

Izpura, J I
Semiconductor Science and Technology. 17 (2002) 12 - p. 1293-1301 , 2002

Link: https://doi.org/10.1088/..

11

The role of climb and glide in misfit relief of InGaAs/GaAs..:

Herrera, M. ; Gutiérrez, M. ; González, D....
Microelectronics Journal. 33 (2002) 7 - p. 559-563 , 2002

Link: https://doi.org/10.1016/..

12

Strain relaxation behavior of InxGa1−xAs quantum wells on v..:

Gutiérrez, M. ; González, D. ; Aragón, G....
Applied Physics Letters. 80 (2002) 9 - p. 1541-1543 , 2002

Link: https://doi.org/10.1063/..

13

Side contact effects on the capacitance properties of junct..:

Izpura, J I
Semiconductor Science and Technology. 16 (2001) 4 - p. 243-249 , 2001

Link: https://doi.org/10.1088/..

14

Determination of the pyroelectric coefficient in strained I..:

Cho, Soohaeng ; Majerfeld, A. ; Sanz-Hervás, A....
Journal of Applied Physics. 90 (2001) 2 - p. 915-917 , 2001

Link: https://doi.org/10.1063/..

15

Strained layer (111)B GaAs/InGaAs single quantum well laser..:

Fleischmann, T. ; Moran, M. ; Hopkinson, M....
Journal of Applied Physics. 89 (2001) 9 - p. 4689-4696 , 2001

Link: https://doi.org/10.1063/..