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2006 IEEE Nanotechnology Materials and Devices Conference ,
1
Breakdown voltage reduction in I-MOS devices:
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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. ,
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70-nm impact-ionization metal-oxide-semiconductor (I-MOS) d..:
, In:
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IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ,
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