Jae-Hoon Han
27231  Ergebnisse:
Personensuche X
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1

Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral A..:

Kuk, Song-Hyeon ; Choi, Seongjun ; Kim, Hyeong Yun...
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 3429-3432 , 2024
 
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5

Reduction of GaAs Buffer Thickness and Its Impact on Epitax..:

Laryn, Tsimafei ; Chu, Rafael Jumar ; Kim, Yeonhwa...
ACS Applied Materials & Interfaces.  16 (2024)  23 - p. 30209-30217 , 2024
 
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6

Proposal of P-Channel FE NAND with High Drain Current and F..:

, In: 2023 IEEE International Memory Workshop (IMW),
 
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8

Examination of Ferroelectric FET for "Cold" Nonvolatile Mem..:

Kuk, Song-Hyeon ; Han, Seung-Min ; Kim, Bong Ho...
IEEE Transactions on Electron Devices.  70 (2023)  8 - p. 4122-4127 , 2023
 
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11

Strategy for 3D Ferroelectric Transistor: Critical Surface ..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
 
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13

Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs..:

Ko, Kyul ; Ahn, Dae-Hwan ; Suh, Hoyoung..
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6237-6243 , 2023
 
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15

Energy-Efficient III–V Tunnel FET-Based Synaptic Device wit..:

Ahn, Dae-Hwan ; Hu, Suman ; Ko, Kyeol...
ACS Applied Materials & Interfaces.  14 (2022)  21 - p. 24592-24601 , 2022
 
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