E-LIB Suche - Ergebnisse für: Janardhanam, V.

1

Digital etching of AlGaN/GaN heterostructures with GaN cap ..:

Kim, Jong-Hee ; Kim, Hyeon-Cheol ; Jeong, Hyeon-Yeong...
Materials Science in Semiconductor Processing. 181 (2024) - p. 108622 , 2024

Link: https://doi.org/10.1016/..

2

Analysis of photodiode and barrier properties of CoPc/n-Ge ..:

Pavani, M. ; Ashok Kumar, A. ; Rajagopal Reddy, V....
Optik. 307 (2024) - p. 171811 , 2024

Link: https://doi.org/10.1016/..

3

Enhancement of device performance in β-Ga2O3 Schottky barri..:

Janardhanam, V. ; Kim, Jong-Hee ; Jyothi, I....
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 693 (2024) - p. 134079 , 2024

Link: https://doi.org/10.1016/..

4

Electrical, structural and photovoltaic properties of accep..:

Mallikarjuna, D. ; Kumar, A. Ashok ; Kaleemulla, S....
Solid State Communications. 386 (2024) - p. 115523 , 2024

Link: https://doi.org/10.1016/..

5

Broadband photodetector based on MoS2/Ge heterojunction for..:

Zumuukhorol, M. ; Khurelbaatar, Z. ; Kim, Dong-Ho...
Vacuum. 209 (2023) - p. 111746 , 2023

Link: https://doi.org/10.1016/..

6

Self-powered MoS2/n-type GaN heterojunction photodetector w..:

Janardhanam, V. ; Zummukhozol, M. ; Jyothi, I...
Sensors and Actuators A: Physical. 360 (2023) - p. 114534 , 2023

Link: https://doi.org/10.1016/..

7

Temperature-dependent Schottky diode behavior of Ni Schottk..:

Boldbaatar, Sosorburam ; Janardhanam, V. ; Zumuukhorol, Munkhsaikhan...
Materials Science in Semiconductor Processing. 163 (2023) - p. 107589 , 2023

Link: https://doi.org/10.1016/..

8

On the current conduction mechanisms of WO3/n-Ge Schottky i..:

Henry Thomas, G. ; Ashok Kumar, A. ; Rajagopal Reddy, V...
Materials Today: Proceedings. , 2023

Link: https://doi.org/10.1016/..

9

Modification of interface properties of Au/n-GaN Schottky j..:

Reddy, D. Surya ; Janardhanam, V. ; Reddy, V. Rajagopal.
Vacuum. 215 (2023) - p. 112300 , 2023

Link: https://doi.org/10.1016/..

10

Current-voltage (I-V) characteristics of Au/n-Ge heterostru..:

Pavani, M. ; Ashok Kumar, A. ; Rajagopal Reddy, V...
Materials Today: Proceedings. , 2023

Link: https://doi.org/10.1016/..

11

Carrier transport across PtSe2/n-type GaN heterojunction:

Janardhanam, V. ; Kim, Jong-Hee ; Jyothi, I....
Vacuum. 218 (2023) - p. 112597 , 2023

Link: https://doi.org/10.1016/..

12

Rapid-thermal-annealing-induced microstructural evolution o..:

Janardhanam, V. ; Boldbaatar, Sosorburam ; Jyothi, I....
Journal of Alloys and Compounds. 918 (2022) - p. 165622 , 2022

Link: https://doi.org/10.1016/..

13

High gain GaN ultraviolet Schottky photodetector with Al-do..:

Janardhanam, V. ; Jyothi, I. ; Zumuukhorol, M....
Surfaces and Interfaces. 27 (2021) - p. 101405 , 2021

Link: https://doi.org/10.1016/..

14

Electrical and carrier transport properties of Ti/α-amylase..:

Reddy, V. Rajagopal ; Prasad, C. Venkata ; Janardhanam, V..
Journal of Materials Science: Materials in Electronics. 32 (2021) 6 - p. 8092-8105 , 2021

Link: https://doi.org/10.1007/..

15

Effects of Rapid Thermal Annealing on the Structural, Optic..:

Sekhar Reddy, P. R. ; Janardhanam, V. ; Rajagopal Reddy, V...
Applied Physics A. 127 (2021) 10 - p. , 2021

Link: https://doi.org/10.1007/..